Analysis of Memristor Modules as an Element Base of Microprocessor Control Systems: Contradictions and Prospects

Vlasov, Andrey I.; Prisyazhnuk, S. P.; Zhalnin, Vladimir P.

doi:10.1109/icieam48468.2020.9111917

Cited by 2 publications

(2 citation statements)

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“…Analysis of alternative materials for creating a resistive memristor layer showed the possibility of using the following materials [4][5][6][7][8][9][10][11][12][13][14][15][16][17]: single-crystal magnetite, conductive polymers, etc. However, memristors made on basis of such materials are produced by uncharacteristic methods for modern technology.…”

Section: Introductionmentioning

confidence: 99%

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Composite Nanomaterials for Implementation of Promising Memristive Structures

Vlasov

Zhalnin

Rasuk

et al. 2022

KEM

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The paper considers principles of creating promising memristive structures based on composite oxides with agglomerates of nanoparticles. The proposed functional nanomaterial is promising for the formation of a composite structure of a memristor, consisting of two electrodes based on one or more nanoscale layers of metal oxides, which are separated by an active medium so that an insulating layer is applied between the electrodes at the periphery of the active medium region. A conductive layer is formed on top of the insulating layer, which is connected to the negative rail, which prevents leakage of negative oxygen ions through the insulating layer. The authors considered in detail technological process of integral production, which forms the necessary vertical profile of the memristive structure ensuring its greatest stability and repeatability of parameters. The implementation of a hardware-software complex for monitoring and diagnosing a memristive structure is proposed. As a result of the research, an original technical solution was created, which ensures formation of memristive structures with a high efficiency of impact on negative oxygen ions, which are charge carriers in this structure, which ensures their high productivity and stability of parameters.

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Section: Introductionmentioning

confidence: 99%

“…It follows that the use of these materials is not rational for production. For this reason, the most often used structure is 'metal-insulator-metal', which in turn is easily integrated into semiconductor technology [4][5][6][7][8][9][10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%