The results of the electrical breakdown time-delay as a function of the relaxation time τ, known as ‘the memory curve’, are presented. The memory curve was experimentally established for the relaxation times from 3 ms to 300 s, for the Ne-filled diode at 7 mbar pressure. Statistical analysis was used to analyse the obtained time-delay values. The results show that for the relaxation times τ ⩽ 0.1 s the dominant part of the total time-delay is the breakdown formative time (tf ∼ 0.1 ms). The breakdown formative time obtained in this investigation shows the same ‘memory effect’ as the breakdown total time-delay, because it slowly increases with τ. For τ > 0.1 s, the statistical time-delay makes up the dominant part of the total time-delay, as was reported earlier.