Analysis of mechanisms of dielectric target charging under the effect of electron irradiation

Evstaf’eva, E. N.; Рау, Э. И.; Mileev, V. N.; Novikov, L. S.; Ditsman, S. A.; Sennov, R. A.

doi:10.1134/s2075113311020079

Cited by 16 publications

(3 citation statements)

References 8 publications

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“…In other words, at the electronic irradiation, the charge accumulates in the volume and on the film surface. These two layers of charges ( − and + ) create an electric field in the region of interaction of the film and the electron beam [14]. As a consequence, a potential appears on the film surface, and its magnitude and sign depend on the total charge…”

Section: Discussionmentioning

confidence: 99%

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Bilanych¹,

Shylenko

Latyshev

et al. 2020

Ukr. J. Phys.

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The interaction of an electron beam with chalcogenide films As4Se96 has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9,3 · 103–9,3 · 107 мC· cm−2 is established. The parameters of the interaction of a film As4Se96 with an electron beam are calculated. It is shown that the observed point of inversion of the shape of the electron-induced relief can be caused by the crossover of the surface potential. The process of manufacturing the image element by the single-step lithography is realized on the surface of an As4Se96 film.

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Section: Discussionmentioning

confidence: 99%

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Bilanych¹,

Shylenko

Latyshev

et al. 2020

Ukr. J. Phys.

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“…Ці два шари зарядів (Q-і Q+) утворюють область просторового заряду в якій утворюється електричне поле в області взаємодії плівки і електронного променя. Внаслідок цього на поверхні плівки виникає потенціал Vs, величина і знак якого залежать від сумарного заряду ΔQ = |Q--Q+| [7] …”

Section: вступunclassified

Fabrication of information protection elements on the film As<sub>4</sub>Se<sub>96</sub> by electron-beam lithography method

Біланич¹,

Шиленко²,

Команіцкій³

et al. 2017

Sci.Herald.Uzh.Univ.Ser.Phys

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“…It is known [15,16] that the treatment of dielectric materials by electron beams at high vacuum is complicated by surface charging of the target. The negative target potential, which may reach as high as the beam accelerating voltage, results in deceleration of the electron beam or even its complete reflection from the charged surface.…”

Section: Introductionmentioning

confidence: 99%

Beam-generated plasma formation near a dielectric target irradiated by a pulsed electron beam in the forevacuum pressure range

Казаков

Окс

Panchenko

et al. 2023

Plasma Sources Sci. Technol.

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We have investigated the formation of electron beam-generated (EBG) plasma near a dielectric (ceramic) target and the compensation of the negative charge accumulated on an insulated metal target when the targets are irradiated by an intense pulsed electron beam in the forevacuum pressure range (4–15 Pa). It is shown that the density of the EBG plasma near the irradiated non-conducting target is greater than the plasma density for a beam propagating freely in a vacuum chamber. The EBG plasma near the target is formed with a certain delay with respect to the electron beam current pulse, because of which the negative potential of the insulated target is also compensated with a delay. The delay time in the formation of the EBG plasma and in the compensation of target negative potential decreases with increasing gas pressure. Expressions have been proposed for estimating this delay time.

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Analysis of mechanisms of dielectric target charging under the effect of electron irradiation

Cited by 16 publications

References 8 publications

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Fabrication of information protection elements on the film As<sub>4</sub>Se<sub>96</sub> by electron-beam lithography method

Beam-generated plasma formation near a dielectric target irradiated by a pulsed electron beam in the forevacuum pressure range

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