Analysis of mark-formation process for phase-change media

Miyamoto, M.; Hirotsune, Akemi; Miyauchi, Yasushi; Ando, Kunio; Terao, Motoyasu; Tokusyuku, N.; Tamura, Reiji

doi:10.1109/2944.735768

Cited by 19 publications

(11 citation statements)

References 1 publication

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“…Table I lists the optical and thermal properties of the materials used in our simulation. [21][22][23][24] Here the thermal conductivity of Cu thin film is assumed to be one tenth of the value for bulk material. The simulated temperature profiles show that the a-Si layer will be heated to a saturation temperature immediately after the laser pulse is turned on.…”

Section: Resultsmentioning

confidence: 99%

Crystallization kinetics of Cu∕a-Si bilayer recording film under thermal and pulsed laser annealing

Her

2004

Journal of Applied Physics

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The crystallization kinetics of Cu∕a-Si bilayer recording film under thermal and pulsed laser annealing has been studied. Under thermal annealing, the crystallization temperature and activation energy for crystallization of a-Si with a thin Cu metal layer were reduced to about 485°C and 3.3±0.1eV, respectively. The reaction exponent was determined to be around 1.8, corresponding to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of the grain growth process. Under pulsed laser annealing, the activation energy for crystallization of a-Si was estimated to be about 0.22eV which is significantly lower than that under thermal annealing and may be explained by the explosive crystallization of a-Si, while the reaction exponent was found to vary from 1.2 to 1.4, corresponding to a grain-growth-controlled process associated with instantaneous nucleation.

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Section: Resultsmentioning

confidence: 99%

Crystallization kinetics of Cu∕a-Si bilayer recording film under thermal and pulsed laser annealing

Her

2004

Journal of Applied Physics

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“…Computer simulations 6) were used to analyze the relationship between the temperature of the recording film on the track center during recording and the thermal conductivity of the first reflective layer. In this simulation, before heat diffusion was calculated, the optical-absorption distribution in the direction of film thickness was calculated.…”

Section: Computer Simulationsmentioning

confidence: 99%

Improvement of Overwrite Jitter of a Phase-Change Optical Disk with Al-Alloy Double-Reflective-Layer Structure

Hirotsune

Terao

Miyauchi

et al. 2007

jjap

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To obtain minimum overwrite jitter after 10 4 overwrites, the cause of degradation of readout waveforms after 10 4 overwrites was investigated by transmittance electron microscopy (TEM). To decrease the temperature of the recording film at the track center during recording, an Al-alloy double-reflective-layer structure is proposed. Two relationships, one between the thermal conductivity of the first reflective layer and the temperature of the recording film during recording and the other between the thermal conductivity and the readout waveforms after overwrites of more than 10 5 times, were investigated using thermal simulation and a digital versatile disk (DVD) disk tester. The optimized disk has a minimum overwrite jitter after 10 5 overwrites at a linear velocity of 6 m/s.

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“…Miyamoto et al 6 and Kando et al 7 analyzed the markformation process through computer simulations. In our analysis, we also evaluated the holding time within the range of the crystallization temperature.…”

Section: Tem Micrographs and Computer Simulationsmentioning

confidence: 99%

Mechanism of mark deformation in phase-change media tested in an accelerated environment

Hirotsune

Terao

Miyauchi

et al. 2007

Journal of Applied Physics

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Increased jitter caused by recording marks becoming deformed in an accelerated environmental test was investigated and a model where the change in the speed of crystallization is affected by passive oxidation on the amorphous surface of the recording layer was devised. The model clarified the mechanism by which deformation in the marks caused increased jitter in the accelerated environmental test. Adding nitrogen into the gas when sputtering the protective layer adjacent to the recording film was investigated. It was confirmed that a prototype disk with this protective layer has decreased jitter after a 500 h accelerated test and superior power margins.

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Analysis of mark-formation process for phase-change media

Cited by 19 publications

References 1 publication

Crystallization kinetics of Cu∕a-Si bilayer recording film under thermal and pulsed laser annealing

Crystallization kinetics of Cu∕a-Si bilayer recording film under thermal and pulsed laser annealing

Improvement of Overwrite Jitter of a Phase-Change Optical Disk with Al-Alloy Double-Reflective-Layer Structure

Mechanism of mark deformation in phase-change media tested in an accelerated environment

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