Analysis of localized excitations in a polymer chain with impurities

Lazarev, S.B.; Škrbić, Ž.; Šetrajčić, Jovan P.; Mirjanić, Dragoljub; Ristovski, Lj.

doi:10.1016/s0022-3697(96)00183-7

Cited by 9 publications

(5 citation statements)

References 10 publications

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“…It shows that the traps’ energy level in the WN P3HT device, which mainly restricts the carrier transport, is deeper than that in the W/O N P3HT devices, considering that the current in the WN devices mainly goes through the nanowires and the junctions between neighboring nanowires. The deeper trap energy level should exist in the nanowire junction since junctions between crystalline domains suffer the forced torsional rotations of rings and the presence of chain ends, as well as the impurities . All these will contribute to the introduction of deep traps.…”

Section: Values Of the Device Performance Parameters (Average Values mentioning

confidence: 99%

“…The deeper trap energy level should exist in the nanowire junction since junctions between crystalline domains suffer the forced torsional rotations of rings [37] and the presence of chain ends, [38] as well as the impurities. [39] All these will contribute to the introduction of deep traps. Therefore, the junction between the nanowires is most likely to introduce the deeper traps, which can be supported by literature as well.…”

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confidence: 99%

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Nanowire Junction Induced High Threshold Voltage in Poly(3‐hexylthiophene) Mesoscale Crystalline Thin‐Film Transistors with Significantly Enhanced Mobility

Deng

Jiang

Sun

et al. 2020

Physica Rapid Research Ltrs

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Fabrication of nanowires in polymer films can dramatically enhance the mobility of thin‐film transistors (TFTs). Unlike the popular method of forming nanowires after spin‐coating films, here a water‐bath method to fabricate the micrometer‐long nanowires in the poly(3‐hexylthiophene) (P3HT) solution is introduced, which is suitable for large‐area printing electronic application. The resulting transistor exhibits significantly enhanced mobility and excellent device stability. However, the threshold voltage of the device is increased, compared with the amorphous film device. The underlying mechanism of the mesoscale crystalline induced threshold voltage increase has been rarely studied. The temperature‐dependent characteristics imply that the activation energy of the device with nanowires is higher than that of the amorphous one, indicating nanowires can introduce deep traps. This suggests that the charge transport is mainly limited by the deep traps at the junctions between the nanowires considering the trap density inside the nanowires is significantly low. The deep traps introduced by the junctions can increase the threshold voltage as the device needs higher voltage to fill these traps in the channel before the device is turned on. This explains why the devices with nanowires have an increased threshold voltage while their mobilities are dramatically enhanced.

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Section: Values Of the Device Performance Parameters (Average Values mentioning

confidence: 99%

mentioning

confidence: 99%

Nanowire Junction Induced High Threshold Voltage in Poly(3‐hexylthiophene) Mesoscale Crystalline Thin‐Film Transistors with Significantly Enhanced Mobility

Deng

Jiang

Sun

et al. 2020

Physica Rapid Research Ltrs

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“…The Green functions are multipolar [10][11][12][13][14], since the denominator is a polynomial D N +1 of order N +1. Therefore, we must use the factorization of prime poles…”

Section: Exciton Statesmentioning

confidence: 99%

“…To determine the crystalline film dynamic permittivity, as in [10][11][12][13][14], we will use formula of DzyaloshinskiPitaevski [18]:…”

Section: Ultrathin Films Permittivitymentioning

confidence: 99%

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Consequences of Confinement Conditions on Absorption in Molecular Nanofilms

et al. 2018

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This paper presents a model of molecular ultrathin crystalline film and analysis of dielectric properties of these spatially very restricted structures. Using the two-time dependent Green functions the energy spectrum and possible exciton states were determined and the dynamic permittivity was calculated. It was shown that the appearance of localized states in the boundary layers of the film depend on the thickness and the changing values of parameters in the border areas of the film. These localized states define schedule and determine the number of resonant absorption lines in the infrared area of the external electromagnetic radiation.

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Different regions of exciton localized states in ultrathin dielectric films

Šetrajčić

Jaćimovski²

2017

Journal of Physics and Chemistry of Solids

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Analysis of localized excitations in a polymer chain with impurities

Cited by 9 publications

References 10 publications

Nanowire Junction Induced High Threshold Voltage in Poly(3‐hexylthiophene) Mesoscale Crystalline Thin‐Film Transistors with Significantly Enhanced Mobility

Nanowire Junction Induced High Threshold Voltage in Poly(3‐hexylthiophene) Mesoscale Crystalline Thin‐Film Transistors with Significantly Enhanced Mobility

Consequences of Confinement Conditions on Absorption in Molecular Nanofilms

Different regions of exciton localized states in ultrathin dielectric films

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