1999
DOI: 10.1063/1.59919
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Analysis of local strain in aluminum interconnects by convergent beam electron diffraction

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Cited by 2 publications
(3 citation statements)
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“…Many native nucleases contain metal ions such as Mg­(II), Ca­(II), Cu­(II), and Zn­(II), which enhance catalytic activity by acting as Lewis acid catalysts or activators for either the nucleophilic attack or the leaving group departure. ,− Early attempts to incorporate a Zn­(II) binding moiety in a peptidic scaffold to carry out hydrolytic phosphate cleavage reactions were performed by the Scrimin group. , They installed 2 equiv of an azacrown functionalized amino acid, ( S )-2-amino-3-[1-(1,4,7-triazacyclononane)]­propanoic acid (ATANP), into a water-soluble heptapeptide chain that adopts a 3 10 -helix structure. This peptide binds up to 2 equiv of Zn­(II) at the azacrown sites, which cooperatively catalyze the cleavage of an RNA model substrate 2-hydroxypropyl- p -nitrophenol phosphate (HPNP) (Scheme , Figure ).…”
Section: De Novo Designmentioning
confidence: 99%
“…Many native nucleases contain metal ions such as Mg­(II), Ca­(II), Cu­(II), and Zn­(II), which enhance catalytic activity by acting as Lewis acid catalysts or activators for either the nucleophilic attack or the leaving group departure. ,− Early attempts to incorporate a Zn­(II) binding moiety in a peptidic scaffold to carry out hydrolytic phosphate cleavage reactions were performed by the Scrimin group. , They installed 2 equiv of an azacrown functionalized amino acid, ( S )-2-amino-3-[1-(1,4,7-triazacyclononane)]­propanoic acid (ATANP), into a water-soluble heptapeptide chain that adopts a 3 10 -helix structure. This peptide binds up to 2 equiv of Zn­(II) at the azacrown sites, which cooperatively catalyze the cleavage of an RNA model substrate 2-hydroxypropyl- p -nitrophenol phosphate (HPNP) (Scheme , Figure ).…”
Section: De Novo Designmentioning
confidence: 99%
“…The isolation in ultra large scale integration (ULSI) devices has become very fine in order to reduce these devices to below the sub-quarter micron level. The local oxidation of silicon (LOCOS) isolation has been replaced by the shallow trench isolation (STI) which has less encroachment into the active device [34,35,36,37].…”
Section: Processing Related To Shallow Trench Isolation (Sti)mentioning
confidence: 99%
“…35 Percentage degradation in V T for different gate bias. The maximum degradation condition is shown to be at Vcs = maximum I SU b condition.139…”
mentioning
confidence: 99%