The lattice thermal conductivities of Mg~Ge and Mg2Si have been analysed in the entire temperature range 2--i000 K in the frame of a new expression for the phononphonon scattering relaxation rate proposed by Dubey asbased on the Guthrie classification of the phonon-phonon scattering events, and a very good agreement has been obtained between the calculated and experimental values of the lattice thermal conductivity for both samples in the entire temperature range of the study. The separate percentage contributions due to three-phonon normal and umklapp processes towards the three-phonon scattering relaxation rate have also been studied. The role of the four-phonon processes has been included in the present analysis.The lattice thermal conductivities of insulators and semiconductors have been studied by a number of workers [1 -10] and it is well established that phononphonon scattering plays a very important role in the analysis of the lattice thermal conductivity of a sample. The three-phonon scattering processes dominate over other processes at high temperatures. At the same time, these processes are not negligibly small at low temperatures and play an important role in the vicinity of the conductivity maxima. However, due to the complex structure of the Brillouin zone and the strong temperature-dependence of the phonon distribution function, the three-phonon scattering relaxation rate involves a complicated dependence on the phonon frequency as well as on the temperature. As a result, even at present we lack an exact analytical expression for this. For practical purposes, there is a need to express the three-phonon scattering relaxation rate by simple relations as a function of the phonon frequency and temperature. Several workers [1][2][3][4][5][6][7][11][12][13][14] studied the phonon-phonon scattering processes by dividing them into groups: normal processes (N-processes), in which momentum is conserved, and umklapp processes (U-processes), in which momentum is not conserved, and they expressed the three-phonon scattering relaxation rates T3ph,-1 N and ~3ph,-Z U due to