Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction

Shiomi, Haruna; Ueda, Akira; Tohei, Tetsuya; Imai, Yasuhiko; Hamachi, Takeaki; Sumitani, Kazushi; Kimura, Shigeru; Ando, Yasuhisa; Hashizume, Tamotsu; Sakai, Akira

doi:10.35848/1882-0786/ac1ee4

Cited by 3 publications

(1 citation statement)

References 35 publications

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“…In the nanoXRD measurements, an X-ray beam can be focused down to several hundred nanometers, which is known to be a very effective tool for local crystal structure analysis thanks to its small beam size. [10][11][12][13][14][15][16] The spacing and tilt of lattice planes in the device structure are simultaneously measured by threedimensional (ω-2θ-j) reciprocal lattice space mapping using a two-dimensional detector for diffracted beams. By these means, we quantitatively analyze the local crystal strain and defect structure in the strained SiGe spintronics devices to clarify the correlation between the local crystallinity and the spin transport properties.…”

Section: Introductionmentioning

confidence: 99%

Local strain distribution analysis in strained SiGe spintronics devices

Onabe,

Wu,

Tohei

et al. 2024

Jpn. J. Appl. Phys.

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This paper reports nanobeam X-ray diffraction (nanoXRD) measurement results for strained SiGe spintronics devices grown by molecular beam epitaxy. A quantitative nanoXRD analysis verifies that in-plane strain is properly exerted on the SiGe spin channel layer in the device showing enhanced spin diffusion length, whereas overall strain relaxation and local change in crystallinity occur in the sample with unclear spin signals. Crystal defects such as dislocations and stacking faults found in cross-sectional transmission electron microscopy observations are correlated with the results of nanoXRD analysis and their influence on spin transport properties are discussed. The present results demonstrate the capability of the nanoXRD based method for quantitative nondestructive analysis of strain distribution and crystallinity in real device structures.

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Section: Introductionmentioning

confidence: 99%

Local strain distribution analysis in strained SiGe spintronics devices

Onabe,

Wu,

Tohei

et al. 2024

Jpn. J. Appl. Phys.

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Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Zhang,

Zhu,

Liu

et al. 2024

Applied Physics Letters

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The influence of external strain on the gate leakage current of AlGaN/GaN high-electron-mobility transistors was studied. The magnitude of the leakage current increased by 39% under 0.1% tensile strain but decreased by 23% under −0.1% compressive strain. The leakage current obeyed the Poole–Frenkel conduction mechanism, demonstrating a decrease/increase in the barrier height for electron emission from the trap state into the continuum dislocation state. Furthermore, the magnitude of critical reverse stressing voltage for the onset of degradation induced by the inverse piezoelectric effect became lower/higher under tensile/compressive strain compared with that of the initial state, which was attributed to the modification of the total stress in the film. In addition, using the transient current method, it was established that the detrapping time constant for the traps in the AlGaN barrier increased as a result of the tensile strain, which is ascribed to movement of the dislocation level away from the conduction band.

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In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications

et al. 2023

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Aluminum scandium nitride (Al1−xScxN) film has drawn considerable attention owing to its enhanced piezoelectric response for micro-electromechanical system (MEMS) applications. Understanding the fundamentals of piezoelectricity would require a precise characterization of the piezoelectric coefficient, which is also crucial for MEMS device design. In this study, we proposed an in situ method based on a synchrotron X-ray diffraction (XRD) system to characterize the longitudinal piezoelectric constant d33 of Al1−xScxN film. The measurement results quantitatively demonstrated the piezoelectric effect of Al1−xScxN films by lattice spacing variation upon applied external voltage. The as-extracted d33 had a reasonable accuracy compared with the conventional high over-tone bulk acoustic resonators (HBAR) devices and Berlincourt methods. It was also found that the substrate clamping effect, leading to underestimation of d33 from in situ synchrotron XRD measurement while overestimation using Berlincourt method, should be thoroughly corrected in the data extraction process. The d33 of AlN and Al0.9Sc0.1N obtained by synchronous XRD method were 4.76 pC/N and 7.79 pC/N, respectively, matching well with traditional HBAR and Berlincourt methods. Our findings prove the in situ synchrotron XRD measurement as an effective method for precise piezoelectric coefficient d33 characterization.

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Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction

Cited by 3 publications

References 35 publications

Local strain distribution analysis in strained SiGe spintronics devices

Local strain distribution analysis in strained SiGe spintronics devices

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications

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