Analysis of interfaces in Bornite (Cu 5 FeS 4 ) fabricated Schottky diode using impedance spectroscopy method and its photosensitive behavior

Sil, Sayantan; Dey, Arka; Datta, Joydeep; Das, Mukunda P.; Jana, Rajkumar; Halder, Soumi; Dhar, Joydeep; Sanyal, Dirtha; Ray, Partha Pratim

doi:10.1016/j.materresbull.2018.06.016

Cited by 53 publications

(41 citation statements)

References 49 publications

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“…The effective carrier mobility under dark and photo illumination was estimated as 1.17 × 10 –4 and 2.71 × 10 –4 m 2 V –1 s –1 from the I versus V 2 plot (Figure S5) using by Mott–Gurney SCLC (see in the Supporting Information): Transit time (τ) is defined as the time which is required by a carrier to travel from the anode to the cathode. It can be expressed as the summation of average total time spent by each electron as a free carrier plus total time spent in the tarp . The transit time (τ) of the charge carrier is calculated as 9.08 × 10 –9 and 3.95 × 10 –9 s under dark and illumination conditions, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The longer transit time in dark condition indicates the higher trapping probabilities. Under the illumination condition, lowering of the transit time leads to reduced trapping time due to the higher carrier mobility. , SCLC parameters are summarized in Table S1 (see Supporting Information). It has been observed that for Al/BiVO 4 SBD, the mobility of the charge carrier is increased up to 2 times after the absorption of photon.…”

Section: Resultsmentioning

confidence: 99%

“…It can be expressed as the summation of average total time spent by each electron as a free carrier plus total time spent in the tarp. 48 The transit time (τ) of the charge carrier is calculated as 9.08 × 10 −9 and 3.95 × 10 −9 s under dark and illumination conditions, respectively. The longer transit time in dark condition indicates the higher trapping probabilities.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Energy-Inexpensive Galvanic Deposition of BiOI on Electrodes and Its Conversion to 3D Porous BiVO₄-Based Photoanode

et al. 2020

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The present work focuses on energy-neutral, bias-free, scalable galvanic synthesis of highly crystalline thin films of BiOI on a fluorine-doped tin oxide (FTO) electrode (BiOI/FTO). Electrodes as developed were subjected to extensive characterization techniques viz. field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, Raman spectroscopy, atomic force microscopy, X-ray diffractometer, ultraviolet−visible spectroscopy, and other electrochemical techniques to observe physio(electro)chemical correlation between galvanic deposition and electrodeposition. In the next step, these BiOI/FTO electrodes were utilized to develop 3D porous BiVO 4 /FTO electrodes (termed as g-BiVO 4 ) via a mild thermochemical process. The g-BiVO 4 /FTO electrode prepared this way exhibited exceptional photoelectrochemical performance for sulfite oxidation, achieving 1.2 mA cm −2 at a bias potential of 1.23 V versus reversible hydrogen electrode (RHE) with the early photocurrent onset (0.21 V vs RHE), as comparable to electrodeposited BiVO 4 on a FTO electrode (e-BiVO 4 /FTO). We also fabricated Schottky barrier diode to shed light on the charge-transport mechanism of the g-BiVO 4 /FTO electrode. In order to improve water oxidation kinetics, we further photodeposited cobalt acetate (CoAc) on the g-BiVO 4 /FTO electrode. The CoAc-g-BiVO 4 /FTO electrode, on optimization, showed a photocurrent of 0.73 mA cm −2 at 1.23 V under the illumination of 20 mW cm −2 blue light-emitting diode with 36 h of sustained water catalytic performance. This demonstrates the importance of galvanic deposition process as an alternative to the high energy-demanding synthesis techniques such as electrodeposition, hydrothermal, and so forth.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

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Energy-Inexpensive Galvanic Deposition of BiOI on Electrodes and Its Conversion to 3D Porous BiVO₄-Based Photoanode

et al. 2020

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“…The transit time, τ, is the time required by a carrier to travel to the cathode from anode, and it may be stated as a summation of the average time spent by each electron (as a free carrier) plus the total time spent in the trap. 59 The transit time of the charge carrier is calculated using eq 11(60)In dark conditions, the effective mobility values of the carriers are estimated as 8.31 × 10 –7 and 2.25 × 10 –7 m 2 V –1 s –1 for 1 and 2 , respectively. Effective carrier mobility (μ eff ) values, after irradiation of light, improve to 1.43 × 10 –5 ( 1 ) and 2.57 × 10 –6 m 2 V –1 s –1 ( 2 ), respectively.…”

Section: Resultsmentioning

confidence: 99%

Designing of Pb(II)-Based Novel Coordination Polymers (CPs): Structural Elucidation and Optoelectronic Application

et al. 2019

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[Pb2(bdc)1.5(aiz)]n (1) and [Pb2(bdc)1.5(aiz)(MeOH)2]n (2) (H2bdc = 1,4-benzene dicarboxylic acid, aiz = (E)-N′-(thiophen-2-ylmethylene)isonicotinohydrazide) have been synthesized, and structural characterization has been established by X-ray analysis and thermogravimetric analysis (TGA). Here, bdc2– links two Pb(II) centers and the aiz ligand binds the metal centers in two different manners: chelating and monodonating. Thus, polymerizations have taken place from the combination of mixed ligand system. Optical band gaps have been studied via UV measurements. Again, the experimental and calculated (from density functional theory (DFT)) band gaps agree well and the semiconducting properties of synthesized polymeric materials have been approved. Thus, optoelectronic and photonic devices can be made by this type of coordination polymers (CPs). The I–V representative curves of 1 (device-A) and 2 (device-B) in both dark and illuminated conditions show that device-A has a higher magnitude of current than device-B. Dark- and photo-conductivity values of device-A are calculated as 2.94 × 10–6 and 6.12 × 10–6 S m–1, respectively, whereas for device-B, the values of dark- and photo-conductivity are 2.92 × 10–7 and 3.66 × 10–7 S m–1, respectively, at room temperature.

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“…The semicircular curve found in Z' and Z'' plot demonstrates that the device may be described by an equivalent R-C circuit with parallel combination of resistance and capacitance. [31] The diameter of each semicircle represents the total impedance of the device at the individual voltage. This diameter decreases with the increment of both negative as well as positive bias voltage, so the RC values of the diode depend on bias voltage.…”

Section: Impedance Spectroscopy (Is) Analysismentioning

confidence: 99%

Exploitation of Structure‐Property Relationships towards Multi‐Dimensional Applications of a Paddle‐Wheel Cu(II) Compound

et al. 2022

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Dedicated to Professor Chittaranjan Sinha on the occasion of his 61st birthdayThe systematic understanding of structure-property correlations of coordination compounds can be utilized for their potential applications. To rationalize this concept, a mixed ligand based Cu(II) compound [Cu 2 (nac) 4 (4-nvp) 2 ](1) (Hnac = 3-(1naphthyl)acrylic acid and 4-nvp = 4-(1-naphthylvinyl)pyridine) has been synthesized and single crystal is obtained by the simple layering technique. Compound 1 has fascinating paddle wheel structure which undergoes weak CÀ H•••π interactions to generate a three-dimensional (3D) supramolecular aggregate. An electrical analysis, i. e. current-voltage (I-V) measurement of this material, exhibited rectifying behavior in the forward bias, which affirms the formation of a Schottky diode. Impedance spectroscopy (IS) analysis has also been performed to get insight into the diode application. Besides, the fluorescence emission of 1 is quenched by 2,4,6-trinitrophenol (TNP) and 2,4dinitrophenol (DNP), among other nitroaromatics, and the maximum quenching efficiency is observed for TNP (98 %). The limits of detection (LOD) are determined by following 3σ methods and are found to be 0.77 μM (TNP), and 0.85 μM (DNP). Interestingly, compound 1 also exhibits biomimetic catechol oxidase-like activity for the oxidation of catechol to quinone. Therefore, the synthesized compound can be considered as a promising candidate for multi-functional applications in material science.

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Analysis of interfaces in Bornite (Cu 5 FeS 4 ) fabricated Schottky diode using impedance spectroscopy method and its photosensitive behavior

Cited by 53 publications

References 49 publications

Energy-Inexpensive Galvanic Deposition of BiOI on Electrodes and Its Conversion to 3D Porous BiVO₄-Based Photoanode

Energy-Inexpensive Galvanic Deposition of BiOI on Electrodes and Its Conversion to 3D Porous BiVO₄-Based Photoanode

Designing of Pb(II)-Based Novel Coordination Polymers (CPs): Structural Elucidation and Optoelectronic Application

Exploitation of Structure‐Property Relationships towards Multi‐Dimensional Applications of a Paddle‐Wheel Cu(II) Compound

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Analysis of interfaces in Bornite (Cu 5 FeS 4 ) fabricated Schottky diode using impedance spectroscopy method and its photosensitive behavior

Cited by 53 publications

References 49 publications

Energy-Inexpensive Galvanic Deposition of BiOI on Electrodes and Its Conversion to 3D Porous BiVO4-Based Photoanode

Energy-Inexpensive Galvanic Deposition of BiOI on Electrodes and Its Conversion to 3D Porous BiVO4-Based Photoanode

Designing of Pb(II)-Based Novel Coordination Polymers (CPs): Structural Elucidation and Optoelectronic Application

Exploitation of Structure‐Property Relationships towards Multi‐Dimensional Applications of a Paddle‐Wheel Cu(II) Compound

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Product

Resources

About

Energy-Inexpensive Galvanic Deposition of BiOI on Electrodes and Its Conversion to 3D Porous BiVO₄-Based Photoanode

Energy-Inexpensive Galvanic Deposition of BiOI on Electrodes and Its Conversion to 3D Porous BiVO₄-Based Photoanode