Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

Abstract

Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations Appl. Phys. Lett. 100, 061111 (2012) Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures J. Appl. Phys. 111, 033103 (2012) Temperature dependence of the intraexcitonic AC Stark effect in semiconductor quantum wells Appl. Phys. Lett. 100, 051109 (2012) Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers Appl. Phys. Lett. 100, 041905 (2012) Time-resolved photocurrents in quantum well/dot infrared photodetectors with different optical coupling structures Appl. Phys. Lett. 100, 043502 (2012) Additional information on Appl. Phys. Lett.

The role of mesa size in nano‐structured green AlGaInN light‐emitting diodes

“…We are furthermore interested in the possibility to modulate strain and piezoelectric polarization by post growth patterning. It has been demonstrated that nanorod LEDs can eliminate the conventional blue shift with increasing current by reducing strain [2] and quantum dot LEDs show a reduced droop [3]. This work looks at the mesa size dependence of electroluminescence (EL) and establishes an experimental framework for the investigation of droop in nano-sized LEDs.…”

The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes

“…Therefore, great efforts have been made to improve the internal quantum efficiency (IQE) of LEDs, especially the large electron-hole wave function overlap quantum wells. The enhancement of spontaneous emission leads to the higher efficiency in green, yellow, and red spectral regime [3]- [7]. Indeed, the surface plasmon approach is also indicated to enhance the emission efficiency for multiple quantum wells (MQWs) [8], [9].…”

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

“…Those factors typically include the charge separation in QWs [4][5][6][7][8][9], the high dislocation density [10][11][12] that limits the internal quantum efficiency (IQE), and the carrier leakage process that leads to the efficiency-droop [13][14][15]. Recent methods based on semi/non-polar QWs [4,5], polar QWs with a large overlap of the electron-hole wave functions [6][7][8][9], and epi-growth on nanopatterned sapphires [10][11][12] [27]. In addition, the use of vertical LEDs has also been investigated for suppressing the current crowding in nitride-based LEDs [24,28,29].…”