Executive SummaryWe present a summary of the recent advances in endpoint and in-line monitoring techniques for chemical-mechanical polishing (CMP) processes. We discuss the technical challenges and review some of the approaches that have been published and/or patented. These methods include optical, thermal (pad temperature), friction (torque motor current), electrochemical, chemical, electrical, and acoustic (vibration). We also present experimental data obtained in our laboratory using selected endpoint methods for metal and oxide CMP.Extended Abstract In-line monitoring and automatic endpoint of chemical-mechanical polishing (CMP) offers many manufacturing advantages such as improved process yields, reduced product variability, closer conformance to target requirements, and higher throughput. There are many potential payoffs however in-line monitoring and automatic endpoint is difficult to implement due to the nature of the CMP process. Ideally, output specifications such as final planarity, film thickness, and defectivity would be monitored directly in real time. There are a number of technical issues associated with equipment design, sensor performance, rotating machinery, and the harsh slurry environment. Currently, on-line metrology equipment that is integrated into the polishing tool is an attractive option for improving throughput while maintaining good quality control.