Analysis of hot-carrier-induced aging from 1/f noise in short-channel MOSFET's

Fang, Zhi-Hao; Cristoloveanu, S.; Chovet, A.

doi:10.1109/edl.1986.26404

Cited by 58 publications

(11 citation statements)

References 5 publications

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“…This is in contrast to many previous studies on gate oxides in which post-irradiation border and interface trap densities typically differ by much less [6], [7], [9]. Because the effective border trap density appears to be unrealistically high, we believe the most natural interpretation of this result is that the number fluctuation model [1]- [12], [23] does not apply to these post-rad FOXFET devices in its simplest form.…”

Section: Effective Border Trap Densitycontrasting

confidence: 80%

“…This H release can lead to the increase in via subsequent reaction with a Si-H bond at the interface [32], and will still leave behind in many cases a stretched Si-Si dimer that can potentially contribute to the low frequency noise in the FOXFET. The presence of radiation induced oxide-trap charge likely reduces the local barrier for electrons to interact with the stretched Si-Si dimers and hydrogen bridge defects [1], [2], [5], [33], consistent with the increase in noise after irradiation and annealing in Figs. 4-7.…”

Section: Effective Border Trap Densitysupporting

confidence: 78%

“…6 shows the normalized noise magnitude as a function of . Here (1) where , and are the gate voltage, the threshold voltage, and the drain voltage [6]- [9]. If the FOXFET noise is due primarily to number fluctuations (that is, conductivity fluctuations due to carrier trapping and emission), and if the defects responsible for the noise are distributed approximately evenly in energy in the SiO band gap, then one would expect to be approximately constant with .…”

Section: B Noise Characteristicsmentioning

confidence: 99%

“…L OW frequency noise measurements are often used to help characterize defect densities and energy distributions in the near-interfacial gate oxides of devices that are irradiated or exposed to high-field stress [1]- [12]. In contrast, noise measurements are rarely applied to assist in the evaluation of defects in parasitic field oxides.…”

Section: Introductionmentioning

confidence: 99%

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Radiation Effects on the $1/f$ Noise of Field-Oxide Field Effect Transistors

Zhou

Fleetwood

Schrimpf

et al. 2008

IEEE Trans. Nucl. Sci.

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Low-frequency (1 ) noise measurements were performed at room temperature as a function of gate bias on Field-Oxide Field Effect Transistors (FOXFETs) that were irradiated with 10-keV X-rays and then annealed at room temperature. The resulting oxide-trap and interface-trap charge densities were estimated by the midgap charge separation technique. Some devices also were exposed to 85% relative humidity at 130 C for three days after irradiation and annealing. Effective border trap densities were estimated from noise measurements in each case. The noise magnitude increases after irradiation and decreases first during annealing and then even more significantly after moisture exposure. The post-humidity-exposure noise for the irradiated devices is well below the pre-irradiation noise for these devices and experimental conditions. The increased noise due to irradiation is attributed to O vacancies and hydrogen bridge (Si-H-Si) defects in the near-interfacial field oxide. The reduction in noise with room-temperature annealing and humidity exposure is due to a combination of thermal and tunnel annealing processes and defect passivation reactions involving water.

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Section: Effective Border Trap Densitycontrasting

confidence: 80%

Section: Effective Border Trap Densitysupporting

confidence: 78%

Section: B Noise Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Radiation Effects on the $1/f$ Noise of Field-Oxide Field Effect Transistors

Zhou

Fleetwood

Schrimpf

et al. 2008

IEEE Trans. Nucl. Sci.

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“…Nf where a is not a constant [2] but a volume and device-length independent [3], [ The usefulness of (1) lays in the fact that a comparison in 1/ f noise in a-values is made independent of bias, frequency and size of the device. The misuse of (1) to calculate a values from experimental results by overlooking the nonuniform current densities on a microscopic scale and replacing 1/N by qpR/L2, always leads to overestimation of apparent avalues as was shown by Vandamme [2], [3], [5]. The equation 1/N = qpR/L2 with q the elementary charge, p the mobility, R the sample resistance and L the length between the contacts, only holds for homogeneous fields in homogeneous samples.…”

Section: G2mentioning

confidence: 99%

1/f noise in MOS devices, mobility or number fluctuations?

Vandamme

Rigaud

1994

IEEE Trans. Electron Devices

314

151

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MOSFET Modeling

Gupta¹,

Gupta²,

Saxena³

2005

Encyclopedia of RF and Microwave Engineering

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Most of the material presented in this article is intended to improve the accuracy of the microwave circuit performance prediction of MOSFET and to reduce the computer time required for the design process. The focus of this article is on small‐signal analytical modeling for MOSFET incorporating various physical phenomena such as the bulk substrate resistance effect the fringing field effect, and channel length modulation (CLM) for its incorporation into circuit simulation. Section 1 reviews the small‐signal analytical model for the insulated gate field‐effect transistor (IGFET) with bulk substrate resistance effect. Variation of admittance parameter ( Y ) and scattering parameter ( S ) with frequency, with and without substrate resistance has been explained. New expressions for Y and S parameters have been derived including the fringing field effect discussed in Section 2. In Section 3, a new physics‐based analytical model is explained in which the relation between AC signal, Y and S parameters, and the structural parameters of the MOSFET are established by incorporating CLM effect. An analytical model for parasitic resistance has also been developed for submicrometer fully overlapped lightly doped drain (FOLD) MOSFET in Section 4. The parasitic resistance for FOLD structure is described considering the n − region as a modified buried‐channel MOSFET and the channel region as an intrinsic enhancement‐mode n‐type MOSFET. It is also demonstrated that the FOLD structure shows better results than that of the LDD structure because of reduction in series resistance. Finally, an analytical model has been presented to characterize the 1/ f and generation–recombinations (GR) noise in the FOLD MOSFET's operating in the linear region. The 1/ f noise model is developed on the basis of oxide‐trap‐induced carrier number and surface mobility fluctuations.

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Analysis of hot-carrier-induced aging from 1/f noise in short-channel MOSFET's

Cited by 58 publications

References 5 publications

Radiation Effects on the $1/f$ Noise of Field-Oxide Field Effect Transistors

Radiation Effects on the $1/f$ Noise of Field-Oxide Field Effect Transistors

1/f noise in MOS devices, mobility or number fluctuations?

MOSFET Modeling

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