Analysis of Hetero-Stacked Source TFET and Heterostructure Vertical TFET as Dielectrically Modulated Label-Free Biosensors

Vanlalawmpuia, K.; Bhowmick, Brinda

doi:10.1109/jsen.2021.3128473

Cited by 35 publications

(11 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, because of the difference in design between the FG and SG biosensors, FG has a greater drain current than SG. MOSFET's potential equilibrium equation is given by 36

V_{italicGS} = {normalΦ}_{italicMS} + {normalΨ}_{S} - \frac{q (\pm N)}{C_{eff}}

where

\pm N

is the biomolecule charge density, q denotes the unit charge,

{normalC}_{italiceff}

denotes the effective capacitance,

{normalΨ}_{S}

is the surface potential, and

{normalΦ}_{italicMS}

is the contact potential.…”

Section: Resultsmentioning

confidence: 99%

Performance assessment of charge plasma based hetero‐structure VTFET biosensor for linearity enhancement

Theja

Panchore

2023

Int J Numerical Modelling

View full text Add to dashboard Cite

This paper examines a charge plasma‐based hetero‐structure full gate vertical tunnel field effect transistor (CP‐FG‐VTFET) as a dielectrically modulated biosensor. It is also compared with a charge plasma‐based short gate vertical TFET (CP‐SG‐VTFET) biosensor and a charge plasma‐based asymmetrical vertical TFET (CP‐AS‐VTFET) biosensor with identical dimensions. We examine the basic physics of these biosensors and compare their ability to recognize charged and neutral molecules. It has been noted that these designs, which use GaSb as the n‐type TFET source material, are suitable for supply voltages lower than 1.2 V. The short gate device has a lower miller capacitance and a higher drive current because it has a narrow bandgap source material. Additionally, the left and right gate alignment of asymmetrical gate architectures has a considerable impact on the sensitivity of the device. Therefore, a simulation is conducted to assess the effects of gate misalignment on biosensor surface potential and drain current sensitivity. In addition, various figures of merits (FOMs) are computed for the device utilizing the dielectric constant range of 1–12, including linearity, sensitivity, and evaluation of noise characteristics. The widely available Silvaco TCAD was employed to simulate the proposed VTFET biosensors. A comprehensive evaluation of the FOM values showed that the CP‐FG‐VTFET is a promising device in terms of linearity and sensitivity.

show abstract

“…However, because of the difference in design between the FG and SG biosensors, FG has a greater drain current than SG. MOSFET's potential equilibrium equation is given by 36

V_{italicGS} = {normalΦ}_{italicMS} + {normalΨ}_{S} - \frac{q (\pm N)}{C_{eff}}

where

\pm N

is the biomolecule charge density, q denotes the unit charge,

{normalC}_{italiceff}

denotes the effective capacitance,

{normalΨ}_{S}

is the surface potential, and

{normalΦ}_{italicMS}

is the contact potential.…”

Section: Resultsmentioning

confidence: 99%

Performance assessment of charge plasma based hetero‐structure VTFET biosensor for linearity enhancement

Theja

Panchore

2023

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

“…InAs and Si has a lattice mismatch of approximately 11.6%. The fabrication process of InAs/Si using selective-area metal–organic vapor epitaxy (SA-MOVPE) has been reported in [ 17 ]. Figure 1 b shows the potential fabrication process flow of proposed GE-HTFET.…”

Section: Device Structure and Simulation Frameworkmentioning

confidence: 99%

“…Due to the compatibility with low power applications, such emerging lab-on-chip heterostructure-based biosensors are widely used in biomedical and healthcare industries, DNA detection, forensic industries, environmental monitoring for efficiently sensing biomolecules. Furthermore, Bhowmick et al also reported heterostructure TFET as an excellent candidate for detection of COVID-19 virus [ 17 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

2023

View full text Add to dashboard Cite

In this article, the authors have articulated DC as well as transient response of a dielectric modulated gate-engineered heterostructure tunnel field effect transistor (GE-HTFET)-based biosensor for label-free detection. A low (direct) bandgap material, indium arsenide (InAs) has been selectively used in the source region to achieve improved band-to-band tunneling of carriers in the tunnel FET. The extended gate architecture is incorporated to stabilize the biomolecules in the nano-cavity aiding significant boost in ON current sensitivity. Using SILVACO ATLAS TCAD tool, the sensitivity of the biosensor is evaluated considering two important parameters possessed by bio-targets, i.e. dielectric constant ( k ) and charge density ( N ). A thorough analysis has been performed to show the impact of variation of dielectric constants and charge density of biomolecules over transfer characteristics of the device. ON current level (Ion) is eventually extracted which is considered here as the suitable sensing parameter of the device. Transient response to detect the settling time of Ion is also demonstrated here in presence of both positively and negatively charged bio-species with varying values of dielectric constant. Then ON current sensitivity is extracted accordingly for different locations of biomolecules within the nano-gap. Finally, an extensive comparative analysis of the present structure in terms of ON current sensitivity is shown to justify its sensing ability as compared to recently reported device structures.

show abstract

“…[13,14] Several studies based on novel designs and structures of the device have already been reported to facilitate the advantages of TFET-based biosensors. [15][16][17][18][19][20][21][22][23] However, TFET devices present a disadvantage of ambipolarity, i.e., the presence of significant current at reverse bias conditions. This degrades the efficiency of the device in switching applications.…”

Section: Introductionmentioning

confidence: 99%

Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

Shaw

Mukhopadhyay

2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

Herein, an n‐channel dual material double gate tunnel field effect transistor (DMDG‐TFET) with a gate–drain underlap using Ge and Ge1−zSnz is proposed. An analytical model has been developed to optimize the length of the underlap region for Ge and Ge–Sn alloy as the channel material. The ambipolarity shown by TFET has been utilized to perform a label‐free biosensing in response to the change of permittivity of the biomaterials used in the gate–drain underlap region. The use of Ge–Sn alloy as a channel material results in a lower ambipolar current but higher sensitivity to the presence of biomolecules. DMDG with workfunction (4 and 4.4 eV) is used to optimize the device performance. The analytical results have been validated by the results obtained using commercial software (Silvaco TCAD). A high sensitivity of the biosensor device is obtained by utilizing the tunnel FET ambipolar current with optimized gate underlap of LUD = 55 nm (for Ge) and LUD = 38 nm (for Ge–Sn alloy).

show abstract

Analysis of Hetero-Stacked Source TFET and Heterostructure Vertical TFET as Dielectrically Modulated Label-Free Biosensors

Cited by 35 publications

References 31 publications

Performance assessment of charge plasma based hetero‐structure VTFET biosensor for linearity enhancement

Performance assessment of charge plasma based hetero‐structure VTFET biosensor for linearity enhancement

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

Contact Info

Product

Resources

About

Analysis of Hetero-Stacked Source TFET and Heterostructure Vertical TFET as Dielectrically Modulated Label-Free Biosensors

Cited by 35 publications

References 31 publications

Performance assessment of charge plasma based hetero‐structure VTFET biosensor for linearity enhancement

Performance assessment of charge plasma based hetero‐structure VTFET biosensor for linearity enhancement

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

Ge‐ and Ge1−zSnz‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

Contact Info

Product

Resources

About

Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors