Analysis of Different Gate Dielectric Materials in Carbon Nanotube Field Effect Transistor (CNFET) Using Optimization Technique

A Compact Model of Gate Capacitance in Ballistic Gate-All-Around Carbon Nanotube Field Effect Transistors

“…In our previous work, it was demonstrated that La2O3 is the best gate dielectric material followed by HfO2 and ZrO2 [25,26]. So, we used La2O3 (εr =30) as a dielectric layer in CNFET.…”

Optimized design of carbon nanotube field-effect transistor using Taguchi method for enhanced current ratio performance

“…This method is not suitable to be used because CNTFETs involve numerous parameters that can affect their performance, such as channel length, channel width, and gate voltage. Similar to the method in [13], although it can produce the highest current ratio, this method only focus on one parameter which is the chirality and not considering other parameters. There are also other method that do not significantly change the design parameter of the CNTFET during optimization process which is by using a chemical solution.…”

“…This improves the performance of current ratio of the CNTFET. Another method to CNT chirality 200000 (26,0) chirality Optimization of oxide thickness [25] Oxide thickness 940000 1 nm tox Optimization of CNT chirality [13] CNT chirality 70406000 (10,0) chirality Optimization using post sonification treatment [13] SWCNTs network in the channel 1339397 Using a chemical solution Optimization using different fabricating method [27] Growth of CNT channel 452000 Arc Discharge method produce highest current ratio optimize the performance of CNTFET is by using different growth method [27]. The study shows that Arc method produce highest current ratio.…”

“…Instead of gating just the part of the CNT that is closer to the metal gate contact, the entire circumference of the nanotube is gated. By wrapping the circumference of the dielectric layer, it will have a better gate control that can provide better performance [13][14][15]. The material used to define the carbon nanotube material in SILVACO simulation design is stated in table 1.…”

“…Several research studies had been done to study the change in physical parameters towards the current characteristic. One of the physical parameters that can affect the current characteristic of GAA CNTFET is the chirality of CNT [13,15,18]. The studies show that the chirality of the carbon nanotube will determine the diameter of the tube.…”