Analysis of Different Configurations of Si1-xGex for Double-Gate MOSFETs and Its Future Applications

Abstract

The major drawbacks of basic electronic components i.e., Vacuum Tubes used before the 1960s were a large size and the inability of these to be scaled down further. With the emphasis shifting to scaling down we came across the MOSFETs in single-gate configuration since the 1960s, they are utilized nowadays in the nanometer region for keeping the high-performance level but still, these single-gate configurations of MOSFETs suffer from different parameters such as coupling, interfacing, channel mobility, channel orientation, switching delay, latch-up and leakage current, short channel effects (DIBL, GIDL, subthreshold swing) and volume inversion and this has led to decrease in inversion charge, increase in leakage current and reduction in the drive current leads us to the exploration of the double-gate configuration of MOSFET and on further exploration it leads us to the novel and higher mobility channel materials such as Si1-xGex which can perform and even shows better results than prevailing single-gate MOSFETs. This paper analyses the different configurations of Si1-xGex for double-gate configuration of MOSFETs and its Future Applications.