Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods

Gomes, Henrique L.; Stallinga, Peter; Rost, H.; Holmes, Andrew B.; Harrison, Mark; Friend, Richard H.

doi:10.1063/1.123469

Cited by 44 publications

(17 citation statements)

References 12 publications

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“…However, in this case of a low density of deep traps, capacitance methods, such as DLTS, are more adequate. 20,21 It is interesting to note that to measure the intrinsic mobility 0 of the material the measurement should be done faster than the trapping time to ensure measuring the initial current. This, however, requires ultra-fast-pulsing techniques.…”

Section: ͑13͒mentioning

confidence: 99%

Electronic transport in field-effect transistors of sexithiophene

Stallinga

Gomes

Biscarini

et al. 2004

Journal of Applied Physics

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Fabrication and characterization of solution-processed methanofullerene-based organic field-effect transistors J. Appl. Phys. 97, 083714 (2005) The electronic conduction of thin-film field-effect-transistors (FETs) of sexithiophene was studied. In most cases the transfer curves deviate from standard FET theory; they are not linear, but follow a power law instead. These results are compared to conduction models of "variable-range hopping" and "multi-trap-and-release". The accompanying IV curves follow a Poole-Frenkel (exponential) dependence on the drain voltage. The results are explained assuming a huge density of traps. Below 200 K, the activation energy for conduction was found to be ca. 0.17 eV. The activation energies of the mobility follow the Meyer-Neldel rule. A sharp transition is seen in the behavior of the devices at around 200 K. The difference in behavior of a micro-FET and a submicron FET is shown.

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Section: ͑13͒mentioning

confidence: 99%

Electronic transport in field-effect transistors of sexithiophene

Stallinga

Gomes

Biscarini

et al. 2004

Journal of Applied Physics

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“…2͒ and as active materials in lasers, 3 which may also find applications in electrically pumped laser diodes ͑LDs͒. Electronic defects such as traps strongly influence, or even dominate, both the optical and charge transport properties of organic 4 and inorganic devices. 5 Charges trapped at these defects are missing as mobile carriers, 6 change the space charge of the defect-rich region, can quench the emissive singlet excitons ͑SEs͒, 7 and can reabsorb the emission.…”

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confidence: 99%

Charged defects in highly emissive organic wide-band-gap semiconductors

List

Kim

Shinar

et al. 2000

Applied Physics Letters

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A combined photoluminescence (PL) -detected magnetic-resonance (PLDMR) and thermally stimulated current (TSC) study of defects in wide-band-gap para-phenylene-type semiconductors is described. As TSC probes the density of mobile charge carriers after detrapping and PLDMR reveals the influence of trapped charges on the PL, their combination yields the concentration of traps, their energetic position, and their contribution to PL quenching. The reported trap densities, which are 2×1016 for the polymer and 1×1014 cm−3, for the oligomer, are the lowest reported for para-phenylene-type materials.

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“…The origin of DTHs has been the subject of some speculation with both intrinsic and extrinsic factors being evoked as the source of such trapping. Extrinsic factors include contamination by ion migration from other layers, residual impurities from the synthesis, and diffusion of O 2 and H 2 O into the device (10)(11)(12)(16)(17)(18)(19)(20)(21)(22)(23). Intrinsic charge trapping theories include mid-gap-state filling, bipolaron formation, interfacial surface sites within the device, and molecular rearrangement (2-4, 6, 8, 13, 14, 24-29).…”

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Light-assisted deep-trapping of holes in conjugated polymers

Bolinger

Fradkin

Lee

et al. 2009

Proc. Natl. Acad. Sci. U.S.A.

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The injection of positive charge carriers (holes) into a single conjugated polymer chain was observed to be light-assisted. This effect may underlie critical, poorly understood organic electronic device phenomena such as the build-up of functional deeply trapped charge layers in polymer light emitting diodes. The charging/ discharging dynamics were investigated indirectly by a variety of single molecule electro-optical spectroscopic techniques, including an ''image-capture'' approach.nanoparticle ͉ single molecule spectroscopy ͉ charge injection

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Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods

Abstract: Articles you may be interested inDeep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

Cited by 44 publications

References 12 publications

Electronic transport in field-effect transistors of sexithiophene

Electronic transport in field-effect transistors of sexithiophene

Charged defects in highly emissive organic wide-band-gap semiconductors

Light-assisted deep-trapping of holes in conjugated polymers

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