Abstract:The dependence of the de current gains of lateral transistors on the buried layer doping level and on the effective nn+ recombination velocity S 1111 +has been analysed using a quasi-one dimensional model. The model takes into account the electric field in the retarding and the accelerating portions of the n+ subdift'used layer. Besides, It utilises the concept of an effective interface recombination velocity or transport velocity in analysing the hole transport in the vertical parasitic p-n-n +-p section. Thi… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.