1996
DOI: 10.1007/bf01198662
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Analysis of damage formation and propagation in metallic thin films under the action of thermal stresses and electric fields

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Cited by 15 publications
(2 citation statements)
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“…The model domain, ÀI`x`I, 0 y W, consists of a strip representing an Al thin ®lm in a solid state device which has been damaged by the formation of a void. The dynamics of a void under the action of external forces, such as applied electric ®elds, mechanical loads, and thermal stresses (Maroudas, Enmark, Leibig and Pantelides 1995), is of utmost importance in the context of interconnect failure. Here, the interaction of the void with an imposed electric ®eld is considered.…”
Section: Electric Fields On Voids In Interconnects Under Electromigramentioning
confidence: 99%
“…The model domain, ÀI`x`I, 0 y W, consists of a strip representing an Al thin ®lm in a solid state device which has been damaged by the formation of a void. The dynamics of a void under the action of external forces, such as applied electric ®elds, mechanical loads, and thermal stresses (Maroudas, Enmark, Leibig and Pantelides 1995), is of utmost importance in the context of interconnect failure. Here, the interaction of the void with an imposed electric ®eld is considered.…”
Section: Electric Fields On Voids In Interconnects Under Electromigramentioning
confidence: 99%
“…An objective modelling of the void with evolving boundaries is a notoriously difficult task, because of the need to track and remesh the reference configuration. The approach used is to model the void surface as sharp discontinuities, whose position must be computed by integrating the appropriate diffusion equations with respect to time [30,37,38]. Bulk fields such as stress, electric current density and temperature may be calculated using the finite element method [4,24,27,29,31] or the boundary element method [19][20][21]32].…”
Section: Model and Governing Equationsmentioning
confidence: 99%