Analysis of Current-Voltage Properties of Al/p-si Schottky Diode with Aluminium Oxide Layer

Abstract

In our study, how the thin metal oxide (aluminium oxide, Al2O3) thin film placed between the metal and the semiconductor on the diode characteristics will affect was investigated. The Al2O3 thin film was suitable for its grown on p-type silicon substrate by atomic layer deposition (ALD) technique. A diode structure with an oxide interlayer was fabricated. To investigate the electrical parameters of the fabricated Schottky diode, measurements of current-voltage (I-V) were carried out at room temperature and in the 5 V voltage range. Using the I-V measurements, diode parameters such as the barrier height (Φb), the ideality factor (n), and the current density (I0) were evaluated using the Thermionic Emission (TE) method. Using the TE method, the approximate values of Φb, n, and Io parameters were calculated as 0.77 eV, 5.43, and 2.43E-09 A respectively. According to calculations, the developed Schottky diode is a rectifier diode and has been determined to have photodiode properties.