Abstract:We have used the cyclic current-voltage (I-V) technique to characterize border traps generated by Fowler-Nordheim tunnel (FNT) electron injection in metal-oxide-semiconductor (MOS) capacitors. We clarified that the current components measured from as-grown samples by the cyclic I-V technique are directly related to the formation or removal of an inversion layer, and we refer to such data as the background current. On the contrary, the distinct peaks in the I-V curves were developed in addition to the backgroun… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.