Analysis of Cryogenic Characteristics of High Power Semiconductor Lasers

Mingpei, 王明培 Wang; Pu, 张普 Zhang; Zhiqiang, 聂志强 Nie; Hui, 刘晖 Liu; Yubo, 孙玉博 Sun; Dihai, 吴的海 Wu; Yuliang, 赵宇亮 Zhao

doi:10.3788/gzxb20194809.0914002

Cited by 2 publications

(1 citation statement)

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“…In 2019, M. P. Wang studied the output power, electro-optical conversion efficiency, and spectral variation of high-power semiconductor lasers in the temperature range of 213 to 273 K. The results showed that the energy distribution of injected carriers became narrower at low temperatures, so the leakage of carriers was reduced. Coupled with the decrease in the transparent carrier concentration and internal optical loss, the threshold current eventually decreased as the temperature dropped [13].…”

Section: Introductionmentioning

confidence: 99%

Study of Temperature Effects on the Design of Active Region for 808 nm High-Power Semiconductor Laser

Wang

et al. 2023

Crystals

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High-power, broad-area, semiconductor lasers are attractive sources for material processing, aerospace, and laser pumping. The design of the active region is crucial to achieve the required high power and electro-optical conversion efficiency, since the temperature significantly affects the performance of the quantum well, including the internal quantum efficiency and mode gain. In this work, the temperature effects on the active region of a 808 nm high-power semiconductor laser were investigated theoretically and experimentally. The simulations were performed with a Quasi-3D model, which involved complete steady-state semiconductor and carrier confinement efficiency combined with a new mathematical method. The critical aluminum content of the quantum barrier was proposed and the relationship between temperature and various loss sources was disclosed in the temperature range of 213 to 333 K, which provides a reliable reference for the design of epitaxial structures of high-power semiconductor lasers in different operating conditions. Subsequently, the optimized epitaxial structure was determined and used to fabricate standard laser bar chips with a cavity length of 2 mm. The experimental electro-optical conversion efficiency of 71% was demonstrated with a slope efficiency of 1.34 W/A and an injection current of 600 A at the heatsink temperature of 223 K. A record high electro-optical conversion efficiency of 73.5% was reached at the injection current of 400 A, while the carrier confinement efficiency was as high as 98%.

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Section: Introductionmentioning

confidence: 99%

Study of Temperature Effects on the Design of Active Region for 808 nm High-Power Semiconductor Laser

Wang

et al. 2023

Crystals

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Improving fluid flow and heat transfer of cryogen spray cooling using sweeping cold air jet

Qenawy,

Chen,

Zhu

et al. 2024

Physics of Fluids

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Industrial growth has led to increased electronic component integration, resulting in higher working temperatures and technological failures. Cryogen spray cooling (CSC) could reach cryogenic temperatures with fast-responding, but its heat transfer limitation due to liquid film deposition is potentially challenging. In this study, CSC cooling is incorporated with either a cold air jet (CAJ) or a sweeping jet (SWJ) to enhance heat and fluid flow. A K-type thermocouple is used for measuring the surface temperature, while the improved Duhamel theorem is used to estimate the heat flux. The spray and film intensities are recorded through the Mie-scattering methodology via high-speed camera. The results demonstrated that the CAJ/SWJ exhibited a significant reduction in surface temperature and film intensity, enhanced heat dissipation and spray efficiency compared to CSC cooling. More precisely, it demonstrated a 26%–36% heat transfer coefficient improvement, along with a 52% increase in the corresponding time of the critical heat flux. Meanwhile, the CAJ/SWJ intensifies heat transfer during film and transition boiling, inspired by the fast liquid film evaporations. In contrast, the SWJ is much preferred due to its wider and stable coolant coverage throughout film evaporation, as seen by its greater heat transfer coefficient. The combined results demonstrated the need to promptly eliminate the deposited film, as it holds the potential to serve as a pivotal resolution for the advancement of thermal management technology.

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Analysis of Cryogenic Characteristics of High Power Semiconductor Lasers

Cited by 2 publications

References 0 publications

Study of Temperature Effects on the Design of Active Region for 808 nm High-Power Semiconductor Laser

Study of Temperature Effects on the Design of Active Region for 808 nm High-Power Semiconductor Laser

Improving fluid flow and heat transfer of cryogen spray cooling using sweeping cold air jet

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