Analysis of correlation between irradiation produced C clusters and intentionally incorporated N impurity in SiC

Wang, Pengfei; Chen, Yawen; Wang, Zhu; Huang, Li; Chen, Jing; Hou, Beibei; Ruan, Yongfeng

doi:10.1016/j.diamond.2012.06.005

Cited by 5 publications

(4 citation statements)

References 38 publications

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“…16 The peak around 1430 cm −1 could be attributed to C–C bonds, confirming the existence of mixed sp2/sp 3 C clusters. 17,18 Moreover, the peak around 1355 cm −1 (D band) arises from defects and disorders in the carbon nanofibers whereas the peak around 1589 cm −1 (G band) comes from the vibration mode of sp 2 -bonded carbon atoms. 19 After sulfuration treatment, compared with Sn/CNFs and Mg–Sn/CNFs (0.99 and 1.00) (Fig.…”

Section: Resultsmentioning

confidence: 99%

Boosting the transport kinetics of free-standing SnS₂@Carbon nanofibers by electronic structure modulation for advanced lithium storage

et al. 2022

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Section: Resultsmentioning

confidence: 99%

Boosting the transport kinetics of free-standing SnS₂@Carbon nanofibers by electronic structure modulation for advanced lithium storage

et al. 2022

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“…The presence of a π* peak in the experimental ion-amorphized specimen is evidence of graphitic sp 2 bonding between carbon atoms. It has been demonstrated that direct C-C homonuclear bonding exists in amorphized SiC, at least based on the results of other electron energy-loss fine structure (EXELFS) measurements from which a pseudo-radial distribution function may be extracted [35,36,62] and results of Raman scattering measurements [41][42][43][44].…”

Section: Discussionmentioning

confidence: 99%

“…In contrast, the electron-irradiated specimens showed no π* peak, thus no evidence of 3-connected C atoms. Results from other spectroscopy techniques applied to irradiated SiC are in conflict on the issue of homonuclear carbon-carbon bond formation, variously represented as evidence for everything from unaltered short-range order to complete absence of chemical ordering [38][39][40][41][42][43][44][45][46].…”

Section: Prior Studies Of Amorphous Sicmentioning

confidence: 99%

The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations

Leide

Hobbs

Wang

et al. 2019

Journal of Nuclear Materials

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Chemical disorder has previously been proposed as an explanation for the anomalously facile amorphization of silicon carbide (SiC), on the basis of topological connectivity arguments alone. In this exploratory study, "amorphous" (formally, aperiodic) SiC structures produced in ab initio molecular dynamics simulations were assessed for their connectivity topology and used to compute synthetic electron energyloss spectra (EELS) using the ab initio real-space multiple scattering code FEFF. The synthesized spectra were compared to experimental EELS spectra collected from an ionamorphized SiC specimen. A threshold level of chemical disorder χ (expressed as the ratio of the number of carbon-carbon bonds to the number of carbon-silicon bonds) was found to be χ ≈ 0.38, above which structural relaxation resulted in formally aperiodic structures. Different disordering methodologies resulted in identifiably different aperiodic structures, as assessed by local-cluster analysis and confirmed by collecting near-edge electron energy-loss spectra (ELNES). Such structural differences are predicted to arise for SiC crystals amorphized by irradiations involving different damage mechanismsand therefore differing disordering mechanisms-for example, when contrasting the respective amorphized products of ion irradiation, neutron irradiation, and high-energy electron irradiation. Evidence for sp 2-hybridized carbon bonding is observed, both experimentally in the irradiated sample and in simulations, and related to connectivity topology-based models for the amorphization of silicon carbide. New information about the probable intermediate-range structures present in amorphized silicon carbide is deduced from enumeration of primitive rings and evolution of local cluster configurations during the ab initio-modelled amorphization sequences.

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“…In addition, 30 Si absorbs neutrons to form 31 Si, and then decays to a 31 P atom [51], and the extra carbon atoms produced in this process also have a great effect on the SiC properties. The impurities can promote the segregation of C atoms into graphite clusters in SiC during irradiation [52], and the cracks were observed to form in the surface of single crystal 6H-SiC [53].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Microstructure and Nanoindentation Hardness of C+ & He+ Irradiated Nanocrystal SiC Coatings during Annealing and Corrosion

Liu

et al. 2020

Materials

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The microstructure and nanoindentation hardness of unirradiated, irradiated, annealed and corroded SiC coatings were characterized. Irradiation of 400 keV C+ and 200 keV He+ with approximately 10 dpa did not cause obvious amorphous transformation to nanocrystal SiC coatings and induced helium bubbles with 2–3 nm dimension distributed uniformly in the SiC matrix. High temperature annealing resulted in the transformation of SiC nanocrystals into columnar crystals in the irradiated region. Line-shaped bubble bands formed at the columnar crystal boundaries and their stacking fault planes and made the formation of microcracks of hundreds of nanometers in length. Meanwhile, some isolated helium bubbles distributed in SiC grains still maintained a size of 2–3 nm, despite annealing at 1200 °C for 5 h. The SiC coating showed excellent corrosion resistance under high-temperature, high-pressure water. The weight of the sample decreased with the increase of corrosion time. The nanoindentation hardness and the elastic modulus increased significantly with C+ and He+ irradiation, while their values decreased with high-temperature annealing. An increase in the annealing temperature led to an increased reduction in the values. Corrosion caused the decrease of nanoindentation hardness and the elastic modulus in the whole test depth range, whether the samples were irradiated or unirradiated.

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Analysis of correlation between irradiation produced C clusters and intentionally incorporated N impurity in SiC

Cited by 5 publications

References 38 publications

Boosting the transport kinetics of free-standing SnS₂@Carbon nanofibers by electronic structure modulation for advanced lithium storage

Boosting the transport kinetics of free-standing SnS₂@Carbon nanofibers by electronic structure modulation for advanced lithium storage

The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations

Investigation of Microstructure and Nanoindentation Hardness of C+ & He+ Irradiated Nanocrystal SiC Coatings during Annealing and Corrosion

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Analysis of correlation between irradiation produced C clusters and intentionally incorporated N impurity in SiC

Cited by 5 publications

References 38 publications

Boosting the transport kinetics of free-standing SnS2@Carbon nanofibers by electronic structure modulation for advanced lithium storage

Boosting the transport kinetics of free-standing SnS2@Carbon nanofibers by electronic structure modulation for advanced lithium storage

The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations

Investigation of Microstructure and Nanoindentation Hardness of C+ & He+ Irradiated Nanocrystal SiC Coatings during Annealing and Corrosion

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Boosting the transport kinetics of free-standing SnS₂@Carbon nanofibers by electronic structure modulation for advanced lithium storage

Boosting the transport kinetics of free-standing SnS₂@Carbon nanofibers by electronic structure modulation for advanced lithium storage