Abstract:<div>In Ultra-thin Body (UTB) devices, besides the Ultra-thin (UT) nature of the channel, which manifests in terms of Quantum Confinement Effects (QCEs), the Band-offsets between the oxide and channel materials at their interface, also tends to strongly impact the channel electrostatics. Despite being very accurate in calculating the band-structure and hence considering QCEs for a given channel material, the Tight-Binding (TB) method tends to be more complicated to use at the channel/oxide interface of M… Show more
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