Analysis of colossal magnetoresistance effect in perovskite oxide heterostructures

Han, Peng; Jin, Kui-juan; Lü, Huibin; Hu, Chunlian; Yang, Ge

doi:10.1016/j.physleta.2011.02.026

Cited by 2 publications

(2 citation statements)

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“…where R 0 is the resistance at zero field and R H is the resistance at field H. Interestingly, the MR value in LSMO/Si-NTs exhibits a crossover behavior with decreasing the temperature, from negative MR (NMR) at RT to PMR at ∼150 K (under 1 According to literature, 10,11,24 the electron filling in the energy band of t 2g…”

Section: Resultsmentioning

confidence: 98%

“…According to literature, ,, the electron filling in the energy band of t 2g ↓ could be the origin of the PMR, where the electrons in t 2g ↓ act as minority spin carriers (MISCs) that have opposite spin direction to the majority spin carriers. In such case, the occupation of electrons in t 2g ↓ could lead to spin-flipping scattering and contribute to the device resistance.…”

Section: Resultsmentioning

confidence: 99%

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Giant Positive Magnetoresistance in Ferromagnetic Manganites/Silicon Nanotips Diode

Chong¹,

Hsu²,

Chen

et al. 2012

J. Phys. Chem. C

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The current–voltage relations and magnetotransport properties of La0.7Sr0.3MnO3/Si-nanotips and La0.7Sr0.3MnO3/Si-film junctions are studied, revealing that their transport properties are dominated by various mechanisms depending on temperature and bias voltage. A giant positive magnetoresistance (PMR) of ∼200% is observed at 40 K in La0.7Sr0.3MnO3/Si-nanotips junction. The temperature dependence of resistance in the presence of magnetic field suggests the origin of giant PMR to be the strong electron–electron interaction and electron–magnon scattering. Interestingly, such behavior is not observed in regular La0.7Sr0.3MnO3/Si-film junction, implying that the coupling between spin and charge could be greatly enhanced at the interface of La0.7Sr0.3MnO3 and Si nanotips.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%