Analysis of Charge Versus the Surface Fermi Level Position at Silicon Surface

Abstract

The surface charge Q,. versus tle surface Fermi level position Φ $ for real (111) surfaces of p-and n-type Si has been studied. The values of Qsc have been obtained on the basis of measurements of the surface potential V by means of the surface photo voltage method. The complementary character of Qsc(Φ3) dependences for the surfaces of p-and n-type Si supports the fact that the surface state distribution is not dependent on the type of bułk doping but on tle surface preparation process.