Analysis of Channel Stress Induced by NiPt-silicide and Its Generation Mechanism

Mizuo, Mariko; Yamaguchi, T.; Kudo, S.; Hirose, Y.; Kimura, Hiroyuki; Tsuchimoto, J.; Hattori, Nobusuke

doi:10.7567/ssdm.2012.d-2-2

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2014

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“…The NiSi film has stress because it follows the atomic arrangement with the substrate by solid-state reaction on a single-crystal Si(100) substrate and because the lattice planes in the NiSi film and Si substrate show similar d-spacings. [25][26][27] Subsequently, crystal bending and dislocations are induced in the NiSi crystal grains, as shown in Fig. 11(a).…”

Section: Discussionmentioning

confidence: 98%

Study of formation mechanism of nickel silicide discontinuities in high-performance complementary metal–oxide–semiconductor devices

Kudo¹,

Hirose²,

Yamaguchi³

et al. 2014

Jpn. J. Appl. Phys.

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We performed detailed analysis of nickel silicide discontinuities induced by agglomeration, which causes the increased electric resistance in high-performance complementary metal–oxide–semiconductor devices, by using advanced physical analysis techniques: transmission electron microscopy (TEM), scanning electron microscopy (SEM) electron backscatter diffraction (EBSD) analysis, and three-dimensional atom-probe (AP) analysis. We confirmed that the agglomeration of the nickel silicide is related to elongated-triangular-shaped splits, which cause discontinuities that occur at low-angle grain boundaries pinned by boron clusters even with small stress. We successfully determined the formation mechanism of these nickel silicide discontinuities in detail.

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Section: Discussionmentioning

confidence: 98%