Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach

Tibaldi, Alberto; Montoya, Jesus Alberto Gonzalez; Alasio, Matteo G. C.; Gullino, Alberto; Larsson, Anders; Debernardi, Pierluigi; Goano, Michele; Vallone, Marco; Ghione, Giovanni; Bellotti, E.; Bertazzi, Francesco

doi:10.1103/physrevapplied.14.024037

Cited by 13 publications

(8 citation statements)

References 57 publications

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“…We foresee other interesting applications of the calibrated D1ANA. For example, it could be used to test new injection schemes for next generation VCSELs; in particular, to switch from oxide-confined VCSELs to buried tunnel junction 850 nm devices [59]. A second potential purpose is its use to perform fast Monte-Carlo investigations of critical parameters, like cavity length, doping levels, and etching of the topmost GaAs contact layer.…”

Section: Discussionmentioning

confidence: 99%

Reduced Dimensionality Multiphysics Model for Efficient VCSEL Optimization

et al. 2021

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The ICT scene is dominated by short-range intra-datacenter interconnects and networking, requiring high speed and stable operations at high temperatures. GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) emitting at 850–980 nm have arisen as the main actors in this framework. Starting from our in-house 3D fully comprehensive VCSEL solver VENUS, in this work we present the possibility of downscaling the dimensionality of the simulation, ending up with a multiphysics 1D solver (D1ANA), which is shown to be capable of reproducing the experimental data very well. D1ANA is then extensively applied to optimize high-temperature operation, by modifying cavity detuning and distributed Bragg’s reflector lengths.

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Section: Discussionmentioning

confidence: 99%

Reduced Dimensionality Multiphysics Model for Efficient VCSEL Optimization

et al. 2021

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“…In this work, NEGF offers a pure quantum approach, capable of extracting the interband spectral current density J NEGF [27], that is a position-and energy-resolved current across the TJ. This can be though as the tunneling component of the current, with the intraband component modeled by the DD, resulting in a NEGF-DD scheme [25], [43].…”

Section: B Negf-dd Approachmentioning

confidence: 99%

“…For CAD purposes, a numerical VCSEL simulator should account for BTBT in TJ-VCSELs. In our previous work [25], we demonstrated the possibility of treating AlGaAs TJ-VCSELs within our in-house one dimensional drift-diffusion (DD) solver, by coupling it with a nonequilibrium Green's function (NEGF) approach [26]- [30]. In this work, the purpose is moving the NEGF-DD concept to our full VCSEL solver VENUS [31]- [33], capable of dealing with axisymmetric structures.…”

Section: Introductionmentioning

confidence: 99%

AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach

Gullino,

Torrelli,

D'Alessandro

et al. 2024

IEEE Photonics J.

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This work reports a multiscale physics-based approach aimed at investigating the benefits of introducing a single tunnel junction (TJ) within conventional AlGaAs Vertical-Cavity Surface-Emitting Lasers (VCSELs). Our comprehensive VCSEL solver VENUS is augmented with a non-equilibrium Green's function (NEGF) approach to extract the band-to-band tunneling rate across the TJ. To showcase the NEGF-VENUS features, we apply it to the commercial pin oxide confined AlGaAs VCSEL previously investigated by VENUS, by inserting a TJ with minimal variations to the optical resonator. Besides finding the optimal position of TJ and oxide aperture, we can also compare the different hole injection schemes in the active region. Our results show the potential of doubling the maximum output power with the same threshold current, with perspectives of further enhancement by stacking more tunnel junctions.

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“…The nonequilibrium Green's function (NEGF) is often used to describe the structure-dependent charge transport [23]. Many works using NEGF combined with Landauer formula for conductance are conducted to study the transport across molecular junctions [24][25][26][27], nanotransistors [28,29], grain boundaries in two-dimensional materials [30], metal-semiconductor interfaces [31,32], metal-metal interfaces in magnetic multilayers [33][34][35][36], and semiconductor interfaces [37,38]. In particular, Bellotti et al investigated the carrier transport through semiconductor interfaces in the presence of positional and compositional disorders using * gchen2@mit.edu NEGF and found that the disorder significantly impedes the coherent propagation of carriers through multiple interfaces [37].…”

Section: Introductionmentioning

confidence: 99%

Significant reduction in semiconductor interface resistance via interfacial atomic mixing

2022

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The contact resistance between two dissimilar semiconductors is determined by the carrier transmission through their interface. Despite the ubiquitous presence of interfaces, quantitative simulation of charge transport across such interfaces is difficult, limiting the understanding of interfacial charge transport. This work employs Green's functions to study the charge transport across representative Si/Ge interfaces. For perfect interfaces, it is found that the transmittance is small and the contact resistance is high, not only because the mismatch of carrier pockets makes it hard to meet the momentum conservation requirement, but also because of the incompatible symmetries of the Bloch wave functions of the two sides. In contrast, atomic mixing at the interface increases the carrier transmittance as the interface roughness opens many nonspecular transmission channels, which greatly reduces the contact resistance compared with the perfect interface. Specifically, we show that disordered interfaces with certain symmetries create more nonspecular transmission. The insights from our study will benefit the future design of high-performance heterostructures with low contact resistance.

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Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach

Cited by 13 publications

References 57 publications

Reduced Dimensionality Multiphysics Model for Efficient VCSEL Optimization

Reduced Dimensionality Multiphysics Model for Efficient VCSEL Optimization

AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach

Significant reduction in semiconductor interface resistance via interfacial atomic mixing

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