Analysis of broadband power combiners and coupled antennas with stochastic load matching in a random field for mm-wave applications

Reliability analysis of BiCMOS SiGe:C technology under aggressive conditions for emerging RF and mm-wave applications: proposal of reliability-aware circuit design methodology

“…Then along the path of the incident proton in the material, both ionizing and non-ionizing energy loss modify the oxide/silicon interface (total ionizing dose, TID effect), the junctions, and the silicon bulk properties as displacement damage dose (DDD) effects. Experimental results and simulations reported in the literature have demonstrated that SiGe devices are tolerant to permanent degradation induced by radiation for both TID for several MRad and DDD effects [7][8][9][10]. Nevertheless, most of previously published research studies focused on specific device-oriented modeling and characterization, where interactions and couplings between neighboring elements (components, function blocks, subsystems) are generally not addressed.…”

“…Nevertheless, most of previously published research studies focused on specific device-oriented modeling and characterization, where interactions and couplings between neighboring elements (components, function blocks, subsystems) are generally not addressed. Furthermore, very limited attention is devoted to the effects of extreme environmental conditions on electromagnetically radiating structures such as antennas, which will enable important functionalities such as MIMO, beamforming, and beamsteering [7]. In this contribution, based on representative structures for linear (passive interconnects), non-linear (low-noise amplifier (LNA)), and electromagnetically radiating elements (antennas), experimental analysis assessing the impact of extreme environmental conditions on the performances of SiGe:C-integrated circuits and systems is proposed in the perspectives of space-defense and emerging 5G mission-critical applications.…”