Abstract:This paper explains the extraction of parameters of Angelov's model for 0.25µm GaAs pHEMT (2x100µm) devices using extensive measurements without using any expensive extraction software. For DC parameters, we analyzed the equations associated with the parameters and established an effective extraction procedure. The small signal parameter extraction was also carried out extensively at various bias points and the bias dependency has been added for certain non-linear elements in the complete model. The model accu… Show more
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