Analysis of Al Doping Effects on Resistivity and Electromigration of Copper Interconnects

Yokogawa, Shinji; Tsuchiya, Hiroyuki; Kakuhara, Y.; Kikuta, K.

doi:10.1109/tdmr.2007.915003

Cited by 35 publications

(13 citation statements)

References 17 publications

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“…After considering the observations made about the microstructure of copper interconnects in the previous section, they appear to be very likely candidates for such a reduction. In fact, decreasing GB resistivity with increasing impurity content was observed in the case of Al [82], which is one of the elements for which reduced resistivity is predicted here.…”

Section: Resistivity Of Doped Copper Gbsupporting

confidence: 62%

Reducing Grain-Boundary Resistivity of Copper Nanowires by Doping

2016

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The resistance of doped single grain boundaries (GBs) in copper is calculated from first principles and systematically compared to its pure single GB equivalent. As a first step, a state-of-the-art ab initio method is used to calculate the resistivity of doped bulk copper for 16 doping elements at concentration 1 at. %. Results are in qualitatively excellent and quantitatively reasonable agreement with the corresponding experimental data, and allow us to determine Ag, Zn, Mg, Pd, Al, and In as best candidates for GB doping. These atoms have a minimal impact on the bulk resistivity, while they also conform to a set of established criteria for alloying with copper. Then, the specific resistivity of six twin GBs is determined for these elements over a wide spectrum of doping concentrations for the submonolayer and the monolayer GB complexions. Reduced resistivity is observed for Zn, Mg, Al, In, and other elements in two high-Σ GBs, and is qualitatively related to the segregation enthalpy as well as to a low number of empty states around the Fermi energy in the boundary plane region of the GB. The results indicate the possibility for a reduced net resistivity in copper interconnects by GB doping.

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Section: Resistivity Of Doped Copper Gbsupporting

confidence: 62%

Reducing Grain-Boundary Resistivity of Copper Nanowires by Doping

2016

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“…Figure 6 shows an example of this measurement. Several researchers have reported a slight delay in the thermal response at high frequency PDC in Al lines [7][8][9]. Similarly, for above 1 MHz PDC, we confirm a remarkable delay in the thermal response of the resistance.…”

Section: A Thermal Time Constants In Cu/low-ksupporting

confidence: 88%

“…To overcome the problem of EM degradation, several advanced process technologies, labeled "EM boosters," have been proposed. However, the tradeoff for improving the EM is an increase in resistivity [6,7], which contributes to the temperature increase due to JH.…”

Section: Introductionmentioning

confidence: 99%

Effective thermal characteristics to suppress joule heating impacts on electromigration in Cu/low-k interconnects

Yokogawa

Tsuchiya

Kakuhara

2010

2010 IEEE International Reliability Physics Symposium

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We investigated the thermal characteristics of Cu/lowk interconnects to suppress the impact of Joule heating (JH) on electromigration. The thermal time constants in multilayered Cu/low-k interconnects were experimentally investigated for the first time on the basis of the transient thermal response. Furthermore, we analyzed the use of direct radiation through stacked contact/via to suppress the temperature increase from JH. The impact of JH on the critical product of the current density and the line length was also investigated.

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“…To compensate, analogs of the techniques used to improve Al The data indicate that current density exponent can vary between 1 and 2 depending on the relative importance of void nucleation and growth to the failure time. electromigration performance have been introduced for Cu: namely, Cu alloys to limit fast grain boundary diffusion [79][80][81][82][83][84], which controls the rate of electromigration in highly scaled Cu, and the incorporation of metallic cap layers at the Cu surface to impede diffusion along the top surface of the Cu [85,86].…”

Section: Electromigrationmentioning

confidence: 99%

Reliability of silicon integrated circuits

Oates

2015

Reliability Characterisation of Electrical and Electronic Systems

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Analysis of Al Doping Effects on Resistivity and Electromigration of Copper Interconnects

Cited by 35 publications

References 17 publications

Reducing Grain-Boundary Resistivity of Copper Nanowires by Doping

Reducing Grain-Boundary Resistivity of Copper Nanowires by Doping

Effective thermal characteristics to suppress joule heating impacts on electromigration in Cu/low-k interconnects

Reliability of silicon integrated circuits

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