Analysis of a high-speed laser-controlled microstrip directional coupler

Andersson, Ingmar; Eng, S. T.

doi:10.1016/0038-1101(87)90042-6

Cited by 11 publications

(2 citation statements)

References 16 publications

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“…The operation of such devices relies on the change of electrical conductance induced by illumination, for example, due to the generation of electrons and holes in semiconductors upon above-bandgap photoexcitation contributing to the increased conductivity. Photoconductive switches are highly demanded for a wide range of applications, such as electrical signal switching, [1][2][3][4][5][6][7] signal sampling, [8][9][10] voltage pulse, 11,12 waveform generation, [13][14][15] and terahertz emitters. 16 So far, popular choices of semiconductors to achieve microwave photoconductive switches are chromium-doped gallium arsenide (Cr-GaAs), 6 low-temperature-grown gallium arsenide (LT-GaAs), [17][18][19][20] indium phosphide (InP), 1,3 silicon (Si) and its derivatives 4,5,8,10,11,13 (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…demanded for a wide range of applications, such as electrical signal switching [1][2][3][4][5][6][7], signal sampling [8][9][10], voltage pulse [11,12], waveform generation [13][14][15], and terahertz emitters [16]. So far, popular choices of semiconductors to achieve microwave photoconductive switches are chromium-doped gallium arsenide [6], low-temperature-grown gallium arsenide (LT-GaAs) [17][18][19][20], indium phosphide (InP) [1,3], silicon (Si) and its derivatives [4,5,8,10,11,13] (e.g.…”

Section: Introductionmentioning

confidence: 99%

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Colloidal upconversion nanocrystals enable low-temperature-grown GaAs photoconductive switch operating at λ = 1.55 μm

Xiang¹,

Chaudhary²,

Tripon‐Canseliet³

et al. 2021

Nanotechnology

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Microwave photoconductive switches, allowing an optical control on the magnitude and phase of the microwave signals to be transmitted, are important components for many optoelectronic applications. In recent years, there are significant demands to develop photoconductive switches functional in the short-wave-infrared spectrum window (e.g.  = 1.3 -1.55 µm) but most state-of-the-art semiconductors for photoconductive switches cannot achieve this goal. In this work, we propose a novel approach, by the use of solution-processed colloidal upconversion nanocrystals deposited directly onto low-temperature-grown gallium arsenide (LT-GaAs), to achieve microwave photoconductive switches functional at  = 1.55 µm illumination.Hybrid upconversion Er 3+ -doped NaYF 4 nanocrystal/LT-GaAs photoconductive switch was fabricated. Under a continuous wave (CW) λ = 1.55µm laser illumination (power density  12.9 mW/µm²), thanks to the upconversion energy transfer from the nanocrystals, a more than 2-fold larger value in decibel was measured for the ON/OFF ratio on the hybrid nanocrystal/LT-GaAs device by comparison to the control device without upconversion nanoparticles (UCNPs). A maximum ON/OFF ratio reaching 20.6 dB was measured on the nanocrystal/LT-GaAs hybrid device at an input signal frequency of 20 MHz.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Colloidal upconversion nanocrystals enable low-temperature-grown GaAs photoconductive switch operating at λ = 1.55 μm

Xiang¹,

Chaudhary²,

Tripon‐Canseliet³

et al. 2021

Nanotechnology

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An optically controlled microwave matching technique

Safwat

Haidar²,

Khalil

et al. 1996

Microw. Opt. Technol. Lett.

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to which the error function is the most sensitive corresponding to the largest eigenvalues. By looking at the largest components of the eigenvectors of the different eigenvalues we are able to order the model parameters from the most sensitive to the least sensitive. Table 1 shows an example of the eigenvectors of a Hessian matrix calculated using Eq. (4). ABSTRACT In this work we present anew optical& controlled microwave matching technique. In this technique the gap between two microwave coupled Received 11-14-95 277-287. KEY TERMS Bruggeman formalism, dielectric-magnetic composites ABSTRACT With the use of rigorously derived expressions for the scattering response of an electrically small sphere embedded in a uniaxial dielectric-magnetic medium, the Bruggeman formalism is established for mixtures of isotropic dielectric-magnetic and uniaxial dielectric-magnetic media. 0 1996 John Wdey & Sons, Inc.

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Focused Electron Beam Induced Deposition of Si‐Based Materials From SiO_xC_y to Stoichiometric SiO₂: Chemical Compositions, Chemical‐Etch Rates, and Deep Ultraviolet Optical Transmissions

Perentes

Hoffmann

2007

Chemical Vapor Deposition

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Room temperature focused electron beam (FEB) induced deposition of contamination‐free transparent materials is a major issue for the FEB production of nano‐optical structures, microchip editing (insulating and passivation layers), and photolithography mask repair. In this work, stoichiometric SiO2 is successfully deposited from three different organosilanes: tetraethoxysilane (TEOS, Si(OCH2CH3)4), tetramethoxysilane (TMOS, Si(OCH3)4), and tetramethylsilane (TMS, Si(CH3)4). The FEB depositions are assisted by a molecular oxygen flux injected simultaneously with the precursor gas. The dependencies on the additional oxygen flux of the chemical compositions of the resulting deposits are studied in detail. Threshold [O2]:[precursor] molecular flux ratios, above which carbon is no longer detectable in the deposited material, are 1.75, 0.15, and 0.05, for TEOS, TMOS, and TMS, respectively. Contamination side‐reactions such as oxygen incorporation in the deposited material due to residual gases in the scanning electron microscope (SEM) chamber are shown to be significant at standard high‐vacuum operating pressures of 5 × 10–5 mbar. The quality of deposited SiO2 obtained from the three precursors is estimated by exposing the material to standard industry cleaning procedures. The etching tests indicate that TMS leads to denser deposits than the two other silanes. The optical transmissions of the deposited SiO2 obtained from TMOS and TMS are measured at 193 nm wavelength, and are 80 % and 99 %, respectively. The latter value fulfills the photomask repair requirements. Finally, hypothetical decomposition pathways of the various silanes used are discussed.

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Analysis of a high-speed laser-controlled microstrip directional coupler

Cited by 11 publications

References 16 publications

Colloidal upconversion nanocrystals enable low-temperature-grown GaAs photoconductive switch operating at λ = 1.55 μm

Colloidal upconversion nanocrystals enable low-temperature-grown GaAs photoconductive switch operating at λ = 1.55 μm

An optically controlled microwave matching technique

Focused Electron Beam Induced Deposition of Si‐Based Materials From SiO_xC_y to Stoichiometric SiO₂: Chemical Compositions, Chemical‐Etch Rates, and Deep Ultraviolet Optical Transmissions

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Analysis of a high-speed laser-controlled microstrip directional coupler

Cited by 11 publications

References 16 publications

Colloidal upconversion nanocrystals enable low-temperature-grown GaAs photoconductive switch operating at λ = 1.55 μm

Colloidal upconversion nanocrystals enable low-temperature-grown GaAs photoconductive switch operating at λ = 1.55 μm

An optically controlled microwave matching technique

Focused Electron Beam Induced Deposition of Si‐Based Materials From SiOxCy to Stoichiometric SiO2: Chemical Compositions, Chemical‐Etch Rates, and Deep Ultraviolet Optical Transmissions

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Focused Electron Beam Induced Deposition of Si‐Based Materials From SiO_xC_y to Stoichiometric SiO₂: Chemical Compositions, Chemical‐Etch Rates, and Deep Ultraviolet Optical Transmissions