Analysis, Design, and Implementation of Junction Temperature Fluctuation Tracking Suppression Strategy for SiC MOSFETs in Wireless High-Power Transfer

Wang, Ruoyin; Tan, Linlin; Li, Chengyun; Huang, Tianyi

doi:10.1109/tpel.2020.3004922

Cited by 19 publications

(6 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a new type of wide bandgap semiconductor device, Silicon Carbide (SiC) metal-oxide-semiconductor fieldeffect transistor (MOSFET) has lower on-resistance, faster switching speed and better thermostability compared with Si insulated-gate-bipolar transistor (IGBT). Therefore, SiC MOSFET is widely used in wireless power transmission, photovoltaic power generation and other fields [1][2][3][4]. However, due to the limitations of wafer growth and chip technology, the current rating of SiC MOSFET is still lower than that of Si IGBT [5].…”

Section: Introductionmentioning

confidence: 99%

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

Qin

Xie

et al. 2023

IEEE Access

View full text Add to dashboard Cite

SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and reduce switching loss. However, when SiC MOSFET turns off, the fast slew rate of drain source voltage causes the current spike in Si IGBT due to the effects of parasitic capacitance charging and carrier recombination, which will produce additional turn-off loss, thus affecting the overall efficiency and temperature rise of the converter. Based on the double pulse test circuit of SiC/Si hybrid switch, the mathematical model of the turn-off transient process is established. The effects of the remnant carrier recombination degree of Si IGBT, the turn-off speed of SiC MOSFET and the working conditions on the turn-off current spike of hybrid switch are evaluated. Although adjusting these parameters can reduce the turn-off current spike somewhat, additional losses will be introduced. Therefore, a new method to suppress the turn-off current spike is proposed to balance the power loss and current stress.INDEX TERMS SiC MOSFET/Si IGBT, hybrid switch, current spike, suppression method

show abstract

Section: Introductionmentioning

confidence: 99%

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

Qin

Xie

et al. 2023

IEEE Access

View full text Add to dashboard Cite

show abstract

“…As a typical wide bandgap (WBG) device, silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistor (MOSFET) shows great advantages over silicon (Si) MOSFET in terms of on-resistance, switching speed, and thermostability [ 3 , 4 , 5 ]. The replacement of Si MOSFETs with SiC MOSFETs can improve the efficiency and power density of power electronics and promote the development of motor drives [ 6 ]. However, the high switching speed of SiC MOSFET makes it very sensitive to parasitic parameters in the circuit [ 7 , 8 ], and the voltage and current are susceptible to producing overshoot and oscillation [ 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress

Qin

Xie

et al. 2023

Micromachines

View full text Add to dashboard Cite

In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight mechanism for the gate-source voltage changed by overshoot and ringing caused by the high switching speed of SiC MOSFET is highlighted, and we propose an optimized design method to obtain optimal parameters of the SiC MOSFET driving circuit with consideration of parasitic parameters. Based on the double-pulse circuit, we evaluated the influence of main parameters on the gate-source voltage, including driving voltage, driving resistance, gate parasitic inductance, and stray inductance of the power circuit. A SiC-based boost PFC is constructed and tested. The test results show that the switching loss can be reduced by 7.282 W by using the proposed parameter optimization method, and the over-voltage stress of SiC MOSFET is avoided.

show abstract

“…Wireless power transmission (WPT) technology does not rely on the traditional contact cable connection (Kurs et al , 2007), which can realize the transmission of electric energy across the air (Wang et al , 2022). At present, the technology has been gradually applied to electric vehicles (Wang et al , 2021), implantable medical devices, consumer electronics (Jeong et al , 2019), industrial robots (Liu et al , 2018), unmanned underwater vehicles, etc. Most of the expensive and sophisticated outdoor electrical equipment (e.g.…”

Section: Introductionmentioning

confidence: 99%

Research on circuit analysis and optimization of wireless power transmission system with embedded coil

Liu

Yang²,

Wang

2022

View full text Add to dashboard Cite

Purpose The wireless power transmission (WPT) system with an embedded coil will achieve a more flexible charging operation and higher system efficiency. However, the comprehensive analysis considering cross-coupling for WPT with embedded coil is rarely investigated. This study aims to improve the system efficiency of WPT with the embedded coil based on circuit analysis and optimization of embedded coil loops. Design/methodology/approach The circuit model of WPT system with the non-resonant compensated embedded coil is developed by taking the cross-coupling of all coils and the circuit compensation degree of the embedded coil into consideration. On the basis of system characteristics analysis, optimization of embedded coil position and non-resonant compensation are proposed to improve the efficiency of WPT system with embedded coil. Experimental studies demonstrate the correctness of theoretical research. Findings The WPT system with embedded coil designed by optimizing the position and non-resonant compensation achieves higher efficiency than those of the system with two-coil mode and the three-coil system with a resonant compensated embedded coil. Practical implications A WPT system with embedded coil could be more efficient by using a non-resonant compensated coil embedded into the buffer material of the storage box for sophisticated electrical equipment. Originality/value The cross-coupling between all coils is considered in circuit analysis for WPT system with embedded coil. Optimization of the position and non-resonant compensation of embedded coil achieves higher efficiency.

show abstract

Analysis, Design, and Implementation of Junction Temperature Fluctuation Tracking Suppression Strategy for SiC MOSFETs in Wireless High-Power Transfer

Cited by 19 publications

References 33 publications

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress

Research on circuit analysis and optimization of wireless power transmission system with embedded coil

Contact Info

Product

Resources

About