Analysis and prediction of stability in commercial, 1200 V, 33A, 4H-SiC MOSFETs

DasGupta, Sandeepan; Kaplar, Robert; Marinella, Matthew; Smith, Mark; Atcitty, Stan

doi:10.1109/irps.2012.6241817

Cited by 15 publications

(11 citation statements)

References 11 publications

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“…The rapid initial drop in V T after half an hour is roughly 150 mV. The increasing shift under further switching stress may be due to self-heating resulting from switching loss, similar to what we have reported previously [12] (the temperatures reported here are hotplate temperatures, and thus selfheating is not taken into account). After an initial drop and slight recovery, the magnitude of the V T shift gradually increases at a rate of -2.5 mV/hr.…”

Section: Resultssupporting

confidence: 86%

Progress in SiC MOSFET Reliability

Flicker¹,

Hughart²,

Atcitty³

et al. 2014

ECS Trans.

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In this work, we have characterized a variety of SiC devices (firstand second-generation 1200 V SiC MOSFETs and 1200 V SiC JFETs) with regards to threshold voltage shifts and leakage currents at high temperatures under both static and dynamic gate bias stress conditions. It was found that, although the stability of SiC MOSFETs has increased dramatically from the first-to the second-generation due to an increase in the quality of the gate oxide layer, SiC JFET devices (which lack a gate oxide altogether) are much more stable with respect to ΔV T for both types of gate bias stresses at high temperatures. We have also characterized the interface trap density (D IT ) in SiC MOSFETs based solely on changes in the sub-threshold slope of the devices' I-V curves under elevated temperature and bias stress, and have produced ∆D IT profiles showing relative changes in interfacial defect concentration at energy levels referenced to the calculated surface potential at the threshold voltage. We have found that the defect density of second-generation SiC MOSFETs is almost an order of magnitude lower than similar first-generation devices from the same manufacturer, consistent with the decreased V T shifts seen in voltage/temperature stress experiments.

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Section: Resultssupporting

confidence: 86%

Progress in SiC MOSFET Reliability

Flicker¹,

Hughart²,

Atcitty³

et al. 2014

ECS Trans.

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show abstract

“…As can be seen, the failure temperatures of CREE SiC MOSFETs are close, while that of ROHM device is higher. Under the same short circuit condition, the device with higher current density presents faster temperature rising rate, as predicted by the electro-thermal model in (11) and (12). For example, the CREE 2G and ROHM SiC MOSFETs have the highest ∂T/∂t at the initial and end stage, respectively.…”

Section: E Simulation Resultsmentioning

confidence: 63%

“…According to (11) and (12), several qualitative conclusions can be drawn as follows: (a) The increase of DC bus voltage V dc (thus the increase of short circuit saturation current I (t)), causes a fast junction temperature rise (∂T/∂t). For a given failure temperature, the short circuit withstand time will be reduced.…”

Section: Substituting (8) -(10) and (2) -(3) Into (5) Yieldsmentioning

confidence: 99%

“…Since (11) and (12) are second order in spatial coordinates and first order in time, two boundary conditions and one initial condition must be specified. In this work, the case temperature is fixed (from 25 ºC to 200 ºC) at the bottom surface of the case.…”

Section: Substituting (8) -(10) and (2) -(3) Into (5) Yieldsmentioning

confidence: 99%

“…electric vehicles and the "more electric" aircraft [1]- [8]. While achieving higher power density (due to limited space and carrier capability) and high temperature electrical design (due to inherent harsh environment), the ability to guarantee the reliability and safety becomes critical [9]- [12]. One of the key reliability issues is the short circuit capability of SiC power MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

Wang

Shi

Tolbert

et al. 2016

IEEE Trans. Power Electron.

215

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This paper presents a comprehensive short circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short circuit capability of three types of commercial 1200 V SiC MOSFETs is tested under various conditions, with case temperatures from 25 o C to 200 o C and DC bus voltages from 400 V to 750 V. It is found that the commercial SiC MOSFETs can withstand short circuit current for only several microseconds with a DC bus voltage of 750 V and case temperature of 200 o C. The experimental short circuit behaviors are compared and analyzed through numerical thermal dynamic simulation. Specifically, an electro-thermal model is built to estimate the device internal temperature distribution, considering the temperature dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e. thermal, diffusion, and avalanche generation currents). Numerical results show that the short circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high temperature related gate oxide damage.

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A Brief Overview of SiC MOSFET Failure Modes and Design Reliability

Nel

Perinpanayagam

2017

Procedia CIRP

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Analysis and prediction of stability in commercial, 1200 V, 33A, 4H-SiC MOSFETs

Cited by 15 publications

References 11 publications

Progress in SiC MOSFET Reliability

Progress in SiC MOSFET Reliability

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

A Brief Overview of SiC MOSFET Failure Modes and Design Reliability

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