Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT

Abstract

To effectively simulate the electrical characteristics of an IGBT, it is necessary to have a good model for applications operating in a wide range of temperatures. A new model of the on-state forward characteristics of an IGBT was developed and validated in MAST language in static mode using the SABER simulator. A particular attention was given to temperature dependence, based on the physical analysis of semiconductor device regions and the use of local and physic-based relations. The model was compared to experimental results and to the standard Hefner model. The validation of the model shows a good agreement between measurements and simulation. A clear improvement in the accuracy of the onstate characteristic temperature dependence with the was obtained.