Analysis and modeling of zero-threshold voltage native devices with industry standard BSIM6 model

Gupta, Chetan; Agarwal, Harshit; Lin, Yen-Kai; Ito, Akihiro; Hu, Chenming; Chauhan, Yogesh Singh

doi:10.7567/jjap.56.04cd09

Cited by 9 publications

(2 citation statements)

References 33 publications

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“…The threshold voltages for these tow metals are nearly zero. Therefore, by properly selecting the Schottky metals, zero‐threshold voltage FETs with low power consumption might be developed for radio‐frequency signal processing in low‐power sensors applications . On the other hand, the threshold voltage can also be markedly increased through surface modification of the wide‐bandgap semiconductors for the development of power devices .…”

Section: Resultsmentioning

confidence: 99%

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

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tical applications due to the high input impedance, breakdown voltage, and integration ability. Tremendous efforts have been made to achieve low subthreshold swing (SS) MOSFETs on low-dimensional materials to overcome the thermal limit of 60 mV dec −1 in conventional CMOS technology. [8][9][10] On the other hand, growing attention has also been paid to the extreme semiconductors MOSFETs based on 2DHG and 2DEG for the applications in high-power, high-frequency, and high temperature electronics. [11][12][13] However, state-of-the-art conventional MOSFETs based on low-dimensional channels such as 2DHG or 2DEG always exhibit normally on (depletion mode) behavior and show uncertainty in threshold voltage. [8][9][10][11][12][13][14][15][16] Energy-efficient normally off (enhancement mode) FETs with low SS values and tunable threshold voltage are strongly in demand from the viewpoint of energy-saving, safety aspects, gate reliability, and electronic circuit simplicity. [17] Junction FET by using p-n junction or Schottky metal gate can achieve normally off operation. [18,19] Nevertheless, many wide-bandgap semiconductors suffer from"asymmetric doping" limitation. For example, n-type dopants with shallow energy levels in diamond and stable p-type doping in ZnO are notoriously difficult. [20,21] For 2D semiconductors, p-n junctions at the MOSFET level has not been achieved yet. These bottlenecks makes inversion-type enhancement-mode MOSFETs difficult, although initial results were reported. [22] While for metal-semiconductor FETs (MES-FETs), there is an intrinsic problem of forward bias limitation. Normally off MOSFETs were reported through channel structure modification, [23] defective gate oxides, [24,25] surface treatments, [26][27][28][29] and ion implantation. [30] However, in most of the cases, the principle is based on the generation of defects, which degrade the device performance as well as the controllability. The formation of recess structure at the gate can successfully lead to normally off operation for 2DEG at the AlGaN/GaN interface, [31] but not applicable to H-terminated diamond and low-dimensional semiconductors.In this work, we propose and demonstrate the device concept of metal-insulator-metal-semiconductor FET (MIMS-FET) based on a 2DHG channel to overcome the drawbacks of MOSFET and MESFET. We show that the MIMS-FET exhibits normally off operation, low subthreshold swing ≈76 mV dec −1 , high drain current, high on/off current ratio over 10 9 , and low gate leakage. These electrical properties are thermally stable up 2D electron and hole gases (2DEG or 2DHG) based on semiconductor surface/interface or 2D materials are promising for next-generation integrated circuits and high-frequency and -power electronics. To reduce power consumption, normally off operation and low-switching-loss metal-oxide fieldeffect transistors (MOSFETs) based on 2DEG or 2DHG are highly in demand. The present methods to achieve normally off MOSFETs have various shortcomings such as reduction in carrier mobility, sacrifice of dra...

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Section: Resultsmentioning

confidence: 99%

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

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“…This paper presents a hybrid voltage reference, based on native NMOS (N‐NMOS) transistors in 55‐nm CMOS. N‐NMOS devices exhibit a negative threshold voltage and are generally available in modern silicon technologies 16,29,30 . The proposed voltage reference operates on a TR of 180°C, a supply range from 1.5 V to 4.2 V, with a current consumption in the hundreds‐nanoamperes range.…”

Section: Introductionmentioning

confidence: 99%

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

Caselli

Liempd

Boni

et al. 2021

Circuit Theory & Apps

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Summary The paper describes the implementation of a bandgap reference based on native‐MOSFET transistors for low‐power sensor node applications. The circuit can operate from −55°C to 125°C and with a supply voltage ranging from 1.5 to 4.2 V. Therefore, it is compatible with the temperature range of automotive and military‐aerospace applications, and for direct Li‐Ion battery attach. Moreover, the circuit can operate without any dedicated start‐up circuit, thanks to its inherent single operating point. A mathematical model of the reference circuit is presented, allowing simple portability across technology nodes, with current consumption and silicon area as design parameters. Implemented in a 55‐nm CMOS technology, the voltage reference achieves a measured average (maximum) temperature coefficient of 28 ppm/°C (43 ppm/°C) and a measured sample‐to‐sample variation within 57 mV, with a current consumption of 420 nA at 27°C.

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Analysis and modeling of anomalous flicker noise in long channel halo MOSFETs

Goel

Gupta

Skalsky

et al. 2021

Solid-State Electronics

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Analysis and modeling of zero-threshold voltage native devices with industry standard BSIM6 model

Cited by 9 publications

References 33 publications

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

Analysis and modeling of anomalous flicker noise in long channel halo MOSFETs

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