Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors
Kai Liu,
Chong Wang,
Kuo Zhang
et al.
Abstract:In this paper, the p-GaN gate AlGaN/GaN high electron mobility transistors (HEMTs) with varying combinations of gate metal work function and gate geometry are fabricated and investigate the influence of gate leakage current (IGS) on the threshold voltage (VTH) and subthreshold swing (SS). The unique dependence of VTH and SS on gate geometry for different metals is observed, which is different from traditional field-effect transistors. A novel hybrid physics model, consisting of the traditional capacitance divi… Show more
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