Analysis and Design of Dual-Peak G_max-Core CMOS Amplifier in D-Band Embedding a T-Shaped Network

160 GHz D-Band Low-Noise Amplifier and Power Amplifier for Radar-Based Contactless Vital-Signs-Monitoring Systems

“…Micromachines 2023, 14, x FOR PEER REVIEW 7 of 10 For benchmarking and comparison with other sub mm Wave designs, refer to Tables 1 and 2. Compared to other reported works in [13,14,[20][21][22][23], the low-noise amplifier achieved state-of-the-art performance. According to Table 1, the proposed LNA achieves high gain, offers the second lowest amount of power consumption, and provides a lownoise figure.…”

D-Band CMOS Power Amplifiers: Challenges, State-of-the-Art, Technological Limitations and Trends

“…In order to increase the bandwidth of the PA architecture, a dual-peak gain-boosting network is proposed. This network, inspired by [9], is not targeted at a single frequency, but two located at the band edges. Based on a T-shaped network with two capacitances and an inductor, the network is presented in Fig.…”

“…Another interesting work done in [9] gives an example of a dual-peak gain boosting network to overcome the performance limitations of CMOS technology at frequencies exceeding 100 GHz. The concept of a T-embedding network has been explored to enhance the G ma .…”

“…Based on S. Mason's work [6], the unilateral gain (U) is defined for all 2-port networks and so, this metric can be used for transistors used in common source configuration. Multiple techniques are used to enhance the gain of transistors [7][8][9][10][11], such as gain-boosting networks or neutralization. The gain-boosting method aims to reach the maximum power gain of the 2-port active network (2-PAN) based on an optimized linear, lossless, and reciprocal (LLR) network.…”