Analysis and Design of Class E Amplifier With Shunt Capacitance Composed of Nonlinear and Linear Capacitances

Suetsugu, Tadashi; Kazimierczuk, Marian K.

doi:10.1109/tcsi.2004.830695

Cited by 111 publications

(63 citation statements)

References 6 publications

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“…In [10], Tadashi Suetsugu proposed an analysis method and design for class-E amplifiers with both linear and nonlinear shunt capacitances. The supporting figures and tables that contain results of a numerical analysis of the design equations are used to extract the component values for the class-E amplifier.…”

Section: Frequency Limitation Of Class-e Amplifiersmentioning

confidence: 99%

“…In the former region, each value of α corresponds to only one frequency f o , which satisfies the boundary conditions for maintaining the optimized performance of a class-E amplifier. Consequently, the external capacitance C e can be obtained from the capacitance ratio α by calculating the junction capacitance C j0 , as in the following equation [10]:…”

Section: Frequency Limitation Of Class-e Amplifiersmentioning

confidence: 99%

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Frequency limitation of an optimum performance class-E power amplifier

Ha‐Van

Dang-Duy

Kim

et al. 2016

IEICE Electron. Express

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Class-E power amplifiers have found widespread application because of their design simplicity and high-efficiency operation. The nonlinear characteristic of the switching device significantly affects the power amplifier performance, although this is often neglected in theoretical analyses. In this paper, a class-E power amplifier with a shunt capacitance composed of nonlinear and linear capacitance has been mathematically analyzed to obtain the frequency limitation that governs maximum efficiency operation. The analytical method is presented to determine the effective operating frequency for any model of MOSFET device. The practical power amplifier circuit, using a MRF282 MOSFET, was implemented to verify the validity of the theoretical analysis.

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Section: Frequency Limitation Of Class-e Amplifiersmentioning

confidence: 99%

Section: Frequency Limitation Of Class-e Amplifiersmentioning

confidence: 99%

Frequency limitation of an optimum performance class-E power amplifier

Ha‐Van

Dang-Duy

Kim

et al. 2016

IEICE Electron. Express

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“…Because the parasitic drainto-source capacitance of the switching device, which significantly contributes to the overall shunt capacitance in the operation, is nonlinear, it is necessary to take into account the nonlinear characteristics of this capacitance. The analysis and design of a class-E PA with both a linear and nonlinear shunt capacitance, which was proposed by Suetsugu and Kazimierczuk [2], included figures and tables that contained the results of the numerical analysis of a design equation. These results were used to determine the values of the nonlinear shunt capacitance, the linear shunt capacitance, the series reactance of the resonant circuit, and the switch peak voltage; however, in some cases, it is impossible or inaccurate to calculate these parameters on the basis of the table and figures.…”

Section: Introductionmentioning

confidence: 99%

Design of a Highly Efficient Broadband Class-E Power Amplifier with a Low Q Series Resonance

Dang-Duy¹,

Ha‐Van²,

Kim³

et al. 2016

Journal of electromagnetic engineering and science

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This work presents a method used for designing a broadband class-E power amplifier that combines the two techniques of a nonlinear shunt capacitance and a low quality factor of a series resonator. The nonlinear shunt capacitance theory accurately extracts the value of class-E components. In addition, the quality factor of the series resonator was considered to obtain a wide bandwidth for the power amplifiers. The purpose of using this method was to produce a simple topology and a high efficiency, which are two outstanding features of a class-E power amplifier. The experimental results show that a design was created using from a 130 to 180 MHz frequency with a bandwidth of 32% and a peak measured power added efficiency of 84.8%. This prototype uses an MRF282SR1 MOSFET transistor at a 3-W output power level. Furthermore, a summary of the experimental results compared with other high-efficiency articles is provided to validate the advantages of this method.Key Words: Broadband, Class-E Amplifier, High PAE, Nonlinear Capacitance. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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“…Nevertheless, his equations were abstract and inapplicable for practical designs using power MOSFET. Tadashi Suetsugu's analysis equations [8,9] were given for a class-E amplifier composed of nonlinear and linear capacitance, which could be applied to real design. In this section, we follow previously obtained results for a class-E amplifier by Tadashi Suetsugu's analysis.…”

Section: Introductionmentioning

confidence: 99%

“…In [9], the component values of a class-E PA circuit can be obtained from calculation formulas or graphs and tables after determining the design specifications of the output power and drain supply voltage.…”

Section: Introductionmentioning

confidence: 99%

Design of high PAE class-E power amplifier for wireless power transmission

Ha‐Van

Seo

2014

IEICE Electron. Express

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Practical class-E power amplifier circuits with shunt capacitance have been increasingly exploited in wireless power transmission systems for efficiency enhancement. Most designs, however, have often assumed that the shunt capacitance is linear and the maintainable efficiency in the low power supply has received little attention simultaneously. In this paper, we propose a class-E design with a shunt capacitance composed of nonlinear and linear capacitances, which was implemented and measured with 92.5% PowerAdded Efficiency (PAE) at 13.56 MHz operating frequency and 4 W output power level. In addition, an adaptive bias control circuit that drives the drain voltage of power amplifier was realized to up-hold high PAE at a lower input power range.

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Analysis and Design of Class E Amplifier With Shunt Capacitance Composed of Nonlinear and Linear Capacitances

Cited by 111 publications

References 6 publications

Frequency limitation of an optimum performance class-E power amplifier

Frequency limitation of an optimum performance class-E power amplifier

Design of a Highly Efficient Broadband Class-E Power Amplifier with a Low Q Series Resonance

Design of high PAE class-E power amplifier for wireless power transmission

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