Analysis and design of audio class D amplifiers

Guo, Linfei

doi:10.32657/10356/62946

Cited by 3 publications

(3 citation statements)

References 41 publications

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“…Because the distance of the two electrodes is too large to maintain a large enough current the charge density of the cathode surface is affected. The excessively small charge density can not meet the needs of the electrodeposition process of the plasma reaction [11] . Therefore the DLC films can not be generated.…”

Section: The Affect Of the Electrode Distance To The Dlc Filmmentioning

confidence: 99%

The Preparation and Microstructure of DLC Films Deposited through Plasma Electrodeposition in Water/Ethanol Solution

Feng

Luo

et al. 2013

AMR

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On the copper substrate the DLC films is preparated by plasma elcctrodeposition in methanol aqueous solution. The plating solution composition: alcohol water proportion is 4:1, the additive KCl content is 3g/L and the AlCl3 is trace amounts. The influence of the current density and the electrode spacing to the electrode surface bubble zone thickness, uniformity and stability are discussed in the article. The film surface morphology is observed by scanning electron microscopy (SEM). The thickness of the film D=30, 350, 410 and 380 nm. The deposition rate K=150, 175, 205 and 190 nm/h. The polycrystalline structure of the film can be observed through the X-ray diffraction (XRD) pattern., the characteristic peak of the (111),(200) and (220) crystal plane are observed at 2θ= 43.9°,50.9°and75.3°. The high carbon content is observed by EDX analysis.

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Section: The Affect Of the Electrode Distance To The Dlc Filmmentioning

confidence: 99%

The Preparation and Microstructure of DLC Films Deposited through Plasma Electrodeposition in Water/Ethanol Solution

Feng

Luo

et al. 2013

AMR

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“…Trivedi et al [6] also studied the transient pressure changes of high head Francis turbine during start-up and shut-down, and found that the pressure changes on the runner are different under different start-up and shut-down strategies, in which the fast start-up and shut-down is 1.5 times of the slow start-up and shut-down. Gou et al [7] predicted the runaway transition process of pumped storage full flow system during power failure, and found that under runaway condition, the pressure at the inlet of volute and draft tube fluctuates periodically at low frequency, with the dominant frequency of 0.27 times runaway frequency.…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation of unsteady flow characteristics in a centrifugal pump during runaway process caused by power failure

Zhang

Wang

Pei

et al. 2022

J. Phys.: Conf. Ser.

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Centrifugal pump is widely used in agricultural irrigation, petrochemical, mining, metallurgy and other industries. A special centrifugal pump with elbow pipe is researched in this paper. The flow rate and rotating speed change rapidly, especially in elbow pipe, causing serious pressure fluctuation and complex vorticity in the centrifugal pump. A user-defined function to solve the angular momentum equation was calculated the pump rotational speed. Unsteady numerical simulation with SST turbulence model is carried out and Short time Fourier transform (STFT) and vorticity strength are used to analyse the pressure fluctuation and vortexes respectively. The results indicate that the rotational speed first decreases to zero and then reversely increases to runaway speed. Large area vorticity appeared at the elbow pipe when the high amplitude frequency of pressure fluctuation increased. The change law of main frequency of pressure fluctuation at the elbow pipe is consistent with the rotational speed change ruler, which is equal to blade passing frequency (BPF). The main source of pressure fluctuation was rotor stator interaction. This study’s results provide a meaningful reference about pump runaway process caused by power failure, leading to the prevention of dangerous situations, for safe operations of the pumping unit.

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“…SiGe/Si dual Fin is considered as next candidate for metal-oxide semiconductor fieldeffect transistor (MOSFET) in advanced node, which fulfills scaling-down requirement. Except of Fin pitch and contact-to-poly pitch scaling-down, device performance can be enhanced by introduction of Ge into PMOS Si [1][2][3][4][5], which shows significant increase of hole mobility, easier Vt engineering and better negative-bias temperature instability (NBTI) than Si. However, SiGe suffers more oxidized consumption during integration processes, Ge self-diffusion, N-P boundary critical dimension (CD) and profile loading via dual Fin plasma etch, Fin CD dependent strain relaxation variation, and threading dislocation defect for SiGe [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%