Analysis and Design of an Asymmetric Doherty Power Amplifier at 2.6 GHz using GaAs pHEMTs

Grams, Valentin; Seidel, Andres; Stärke, Paul; Wagner, Jens; Ellinger, Frank

doi:10.1109/comcas44984.2019.8958384

Cited by 4 publications

(4 citation statements)

References 4 publications

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“…To determine the optimal intrinsic load for the main amplifier R OPT,M,int and for the peak amplifier R OPT,P,int , the transistors are biased in a deep class AB with V Bias,M/P = −2.9 V. According to the advantages described in [6], an asymmetric drain biasing of V DD,M = 18 V and V DD,P = 28 V is used. The main PA has to Based on these values, the impedance at the device/bias plane is varied to identify the optimum external load Z OPT,ext , which transforms to R OPT,int at the intrinsic node.…”

Section: Optimum Load Determination With Intrinsic Node Methodsmentioning

confidence: 99%

“…As described in a previous work [6], it is advantageous to modify the classical (symmetric) Doherty modulation network toward an asymmetric Doherty modulation network. This enables a more efficient performance for signals with a PAPR > 6 dB.…”

Section: Impedances Provided By the Classical Doherty Modulation Networkmentioning

confidence: 99%

“…For an asymmetric topology with OBO larger than 6 dB, (N − 1) is larger than 1. The load modulation in dependence of N was thoroughly investigated in [6], however a frequency analyses was not carried out and shall be part of the proposed work.…”

Section: Impedances Provided By the Classical Doherty Modulation Networkmentioning

confidence: 99%

“…According to (10), Z 0 is set to 125 Ω to avoid additional bandwidth limitations by TL 1 . For an OBO of 8 dB, N becomes 2.5 according to (6). Hence, the characteristic impedance of the λ/4 line TL 0 is obtained as follows: 50 Ω for ξ = 1/N, 79.1 Ω for j = 1/ N √ , and 100 Ω for ξ = 0.8.…”

Section: Design Process Of the Proposed Doherty Power Amplifiermentioning

confidence: 99%

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Frequency analysis of load modulation networks for asymmetric Doherty power amplifiers in GaN

Seidel

Wagner

Ellinger

2021

Int. J. Microw. Wireless Technol.

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This paper investigates the frequency response of load modulation networks for asymmetric Doherty power amplifiers (ADPA) with an output back-off power level larger than 6 dB and a power ratio of peak to main amplifier (N − 1) larger than 1. The influence of the main path impedance transformer (IT) on the Doherty impedances at main and peak path as well as on the ADPA's efficiency is analyzed. Scaling of the main IT's characteristic impedance via ξ indicates a maximum broadband matching for an input voltage Vin of ξ · Vin,max. By weighting the frequency- and ξ-dependent efficiency curves using a probability density function (PDF), an optimum is obtained for ξ = 1/N. To verify the theory, three ADPAs with different ξ-scaled ITs are designed, measured, and compared. For the design at 3.6 GHz, a gallium nitride (GaN) transistor is used. By means of the intrinsic node matching technique, matching at the current source plane is obtained. In laboratory measurements, the ADPA with ξ = 1/N achieves a power-added efficiency (PAE) of 63% at 42 dBm output power and a PDF-weighted average PAE of 38.8% within 400 MHz bandwidth for 8 dB peak-to-average power ratio. Comparison with similar state-of-the-art ADPAs in GaN technology shows highest PAE and operation power gain GP for center frequencies larger than 3.0 GHz.

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Section: Optimum Load Determination With Intrinsic Node Methodsmentioning

confidence: 99%

Section: Impedances Provided By the Classical Doherty Modulation Networkmentioning

confidence: 99%

Section: Impedances Provided By the Classical Doherty Modulation Networkmentioning

confidence: 99%

Section: Design Process Of the Proposed Doherty Power Amplifiermentioning

confidence: 99%

See 2 more Smart Citations

Frequency analysis of load modulation networks for asymmetric Doherty power amplifiers in GaN

Seidel

Wagner

Ellinger

2021

Int. J. Microw. Wireless Technol.

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Asymmetric Doherty Power Amplifier at 60 GHz in 130 nm BiCMOS

Seidel

Grams²,

Wagner

et al. 2021

2020 IEEE MTT-S Latin America Microwave Conference (LAMC 2020)

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A planner Doherty power amplifier with harmonic suppression with open and short ended stubs

Lotfi

Roshani

et al. 2021

Frequenz

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This paper presents a new Doherty power amplifier (DPA) with harmonics suppression. A Wilkinson power divider (WPD) with open-ended and short-ended stubs is designed to suppress unwanted signals. To design the power divider in the circuit of the DPA, even and odd mode analyses are utilized. The proposed design operates at range of 1.2–1.6 GHz. The linearity of the suggested DPA is increased about 6 dBm, in comparison with the main amplifier. The designed Doherty amplifier has a power added efficiency (PAE), drain efficiency (DE) and Gain about 60, 61% and 19 dB, respectively. The designed WPD suppresses 2nd up to 14th harmonics with more than 20 dB suppression level, which is useful for suppressing unwanted harmonics in DPA design. ATF-34143 transistors (pHEMT technology) are used for this DPA amplifier design. The main amplifier has class-F topology and class-F inverse topology is used for auxiliary amplifier.

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Analysis and Design of an Asymmetric Doherty Power Amplifier at 2.6 GHz using GaAs pHEMTs

Cited by 4 publications

References 4 publications

Frequency analysis of load modulation networks for asymmetric Doherty power amplifiers in GaN

Frequency analysis of load modulation networks for asymmetric Doherty power amplifiers in GaN

Asymmetric Doherty Power Amplifier at 60 GHz in 130 nm BiCMOS

A planner Doherty power amplifier with harmonic suppression with open and short ended stubs

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