Analysis and design of a novel high capacitance ratio and low actuation voltage RF MEMS switch

Deng, Kun; Ye, Fuxing; Deng, Zhongliang; Wang, Xuanming; Han, Ke

doi:10.1007/s00542-020-05070-7

Cited by 7 publications

(3 citation statements)

References 16 publications

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“…T A B L E 3 Operating characteristics of the proposed switch respect to some newly published works Sravani et al 19 Molaei and Ganji 37 Goel et al 4 Sravani et al 20 Shanthi et al 29 Bansal et al 38 Deng et al 39 This…”

Section: Discussionmentioning

confidence: 96%

A high contact force and high‐isolation radio‐frequency microelectromechanical systems switch for radio‐frequency front‐end applications

Dadgar

Aghdam

2022

Circuit Theory & Apps

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A new structure for low‐loss and high‐isolation radio‐frequency microelectromechanical systems (RF MEMS) switches is presented. The high contact force of the switch leads to very small ranges for contact resistance which is the main constrain of DC‐contact RF MEMS switches. The contact resistance of the switch is 27 mΩ leading to negligible thermal noise which is one of the most important parameters for devices operating at RF front‐ends immediately after the antenna where there is not any active stage. The switch is composed of two actuators: an electrothermal actuator for actuation of the switch from OFF to ON state and an electrostatic actuator to hold the switch at ON state. The insertion loss, return loss, and isolation of the switch for frequencies below 70 GHz are −0.35, −20, and −10 dB, respectively. The contact force and contact resistance of the switch are 0.93 mN and 0.027 Ω, respectively. Electrothermal and electrostatic actuators require 0.91 and 50 actuation voltages, respectively. During the ON‐state, the power consumption of the switch is near zero. The low contact resistance and high‐isolation characteristics of the switch make it very suitable for mobile front‐ends.

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Section: Discussionmentioning

confidence: 96%

A high contact force and high‐isolation radio‐frequency microelectromechanical systems switch for radio‐frequency front‐end applications

Dadgar

Aghdam

2022

Circuit Theory & Apps

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“…The switch beam can be equivalently regarded as rigid due to minimal deformation, and its mechanical properties can be described by the linear elastic coefficient [26]. The expression for the restoring force experienced by the upper electrode can be formulated as…”

Section: Structure and Theoretical Analysismentioning

confidence: 99%

Design of Broadband High-Frequency Multi-Throw RF-MEMS Switches

Yu,

Zhang,

et al. 2024

Micromachines

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This paper introduces a broadband triple-pole triple-throw (3P3T) RF MEMS switch with a frequency range from DC to 380 GHz. The switch achieves precise signal control and efficient modulation through its six-port design. It achieves an insertion loss of −0.66 dB across its frequency range, with isolation and return loss metrics of −32 dB and −15 dB, respectively. With its low actuation voltage of 6.8 V and rapid response time of 2.28 μs, the switch exemplifies power-efficient and prompt switching performance. The compact design is ideal for integration into space-conscious systems. This switch is pivotal for 6G research and has potential applications in satellite communications, military radar systems, and next-generation radio applications that require multi-antenna access.

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“…Different geometries of beams and/or actuation pads have been proposed [1] to reduce the pull-in voltage of RF MEMS switches, also taking into account the residual stress of the suspended beam. However, to our knowledge, only in few works [2] have the theoretical values of the residual stress been combined with experimental values of the pull-in voltage and/or spring constant for a variety of beams with different geometric parameters.…”

Section: Introductionmentioning

confidence: 99%