Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates

Altman, David; Tyhach, Matthew; McClymonds, James W.; Kim, Samuel; Graham, Samuel; Cho, Jungwan; Goodson, Kenneth E.; Francis, Daniel; Faili, Firooz; Ejeckam, F.; Bernstein, S.

doi:10.1109/itherm.2014.6892416

Cited by 36 publications

(31 citation statements)

References 16 publications

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“…One practical example is as follows: current efforts to use CVD diamond to remove heat from nitride devices appear to be limited by the quality of the interface between GaN and diamond. [193] Understanding such interfaces will become important as device designers begin to transfer and bond low-thermalconductivity devices to higher-thermal-conductivity substrates.…”

Section: Thermal Transportmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

992

463

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Section: Thermal Transportmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

992

463

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“…Chemical vapor deposited (CVD) polycrystalline diamond has the highest thermal conductivity reaching up to 2000 W m −1 K −1 , which can greatly improve the thermal management of a GaN device . The GaN‐on‐diamond shows an increase in three times the power density and lower junction temperatures than those on a GaN‐on‐SiC device …”

Section: Introductionmentioning

confidence: 99%

“…4 The GaN-on-diamond shows an increase in three times the power density and lower junction temperatures than those on a GaN-on-SiC device. [5][6][7][8][9][10] However, for a GaN-on-diamond device, the heat spreading capability is dependent on not only the diamond thermal conductivity but also the significant effective thermal boundary resistance (TBR) of the GaN/diamond interface. TBR is a lump resistance, including contributions to a dielectric layer and the high-grain-boundary-density diamond near to the interface.…”

Section: Introductionmentioning

confidence: 99%

The influence of dielectric layer on the thermal boundary resistance of GaN‐on‐diamond substrate

Xin

Wei

Kong³

et al. 2019

Surface & Interface Analysis

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The cooling behavior of GaN‐on‐diamond substrate can be enhanced by reducing the thermal boundary resistance (TBR), which is mainly determined by the nature of interlayer. Although SiN film is considered as the primary candidate of dielectric layer, it is still needed to be optimized. In order to facilitate the understanding of the influence of dielectric layer on the TBR of GaN‐on‐Diamond substrate, aluminum nitride (AlN), and silicon nitride (SiN) film were compared systematically, both of which are 100 nm. The time‐domain thermoreflectance (TDTR) measurements, adhesion evaluation, and microstructural analysis methods were adopted to analyse these two interlayers. The results show the TBR of SiN interlayer is as low as 38.5 ± 2.4 m2K GW−1, comparing with the value of 56.4 ± 5.5 m2K GW−1 for AlN interlayer. The difference of TBR between these two interlayers is elucidated by the diamond nucleation density, and the adhesion between the diamond film and GaN substrate, both of which are affected by the surface charge and chemical groups of the dielectric layer.

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“…However, the mechanism of heat transfer in the near-junction area is not yet fully understood. [11][12][13][14][15][16][17][18] Therefore, a theoretical model based on finite element method (FEM) is applied to characterize the impacts diamond substrates and transition layer have on thermal power density under different conditions. The difference in coefficient of thermal expansion of diamond substrate, transition layer and GaN buffer will introduce mechanical stress.…”

Section: Introductionmentioning

confidence: 99%

FEM thermal and stress analysis of bonded GaN-on-diamond substrate

et al. 2017

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A three-dimensional thermal and stress analysis of bonded GaN on diamond substrate is investigated using finite element method. The transition layer thickness, thermal conductivity of transition layer, diamond substrate thickness and the area ratio of diamond and GaN are considered and treated appropriately in the numerical simulation. The maximum channel temperature of GaN is set as a constant value and its corresponding heat power densities under different conditions are calculated to evaluate the influences that the diamond substrate and transition layer have on GaN. The results indicate the existence of transition layer will result in a decrease in the heat power density and the thickness and area of diamond substrate have certain impact on the magnitude of channel temperature and stress distribution. Channel temperature reduces with increasing diamond thickness but with a decreasing trend. The stress is reduced by increasing diamond thickness and the area ratio of diamond and GaN. The study of mechanical and thermal properties of bonded GaN on diamond substrate is useful for optimal designs of efficient heat spreader for GaN HEMT.

show abstract

Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates

Cited by 36 publications

References 16 publications

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

The influence of dielectric layer on the thermal boundary resistance of GaN‐on‐diamond substrate

FEM thermal and stress analysis of bonded GaN-on-diamond substrate

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