Analyses of p–n heterojunction in 9.4%-efficiency CZTSSe thin-film solar cells: Effect of Cu content

Kim, Kyung-Pil; Jeong, Woo‐Lim; Lee, Dong-Seon; Mun, Seung‐Hyun; Kwak, Hoe-Min

doi:10.1016/j.jallcom.2022.164899

Cited by 5 publications

(3 citation statements)

References 38 publications

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“…Among the obstacles facing the exploits of solar energy is the lack of photovoltaic materials with a high conversion efficiency in solar cells [1]. The CdTe and CIGS thin-film solar cells possess good photo-conversion efficiency, though they use rare earth metals as raw materials for the absorbent layers, like Indium and Gallium, as well as cadmium and tellurium which are toxic materials [2,3]. Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) quaternary semiconductor is a favored material for photovoltaic cells that will replace the above materials, and due to its good photovoltaic properties, high absorption coefficient, and direct band gap [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Improving the Performance of CZTS/CZTSSe Tandem Thin Film Solar Cell

Hafaifa,

Maache,

Bouabdelli

2024

J. Nano- Electron. Phys.

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Numerical simulation of CZTS/CZTSSe tandem solar cells utilizing Silvaco-Atlas was investigated. Firstly, the performances of conventional CZTS/CdS/ZnO and CZTSSe/CdS/ZnO single solar cells with thicknesses for both absorber layers at 360 nm and 3 nm, respectively, were studied independently. A wide band gap CZTS thin-film cell and a narrow band gap CZTSSe-based cell present conversion efficiencies of 11.10% and 13.76% respectively. This agrees with experimental and simulation results previously published. Furthermore, a CZTS/CZTSe tandem cell configuration is identified keeping the identical material properties. A good conversion efficiency of 25.27% was obtained. Finally, the thickness of the CZTS adsorption layer of the top cell was optimized as a crucial factor to enhance the tandem performance. Optimal thickness coinciding to a highest efficiency of 26.05% is 420 nm. The output parameters obtained are, Jsc  28.46 mA/cm 2 , Voc  1.27 V and FF  71.83%. This suggested results may help in the future research and may lead to the fabrication of CZTSSe-based solar cells.

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Section: Introductionmentioning

confidence: 99%

Improving the Performance of CZTS/CZTSSe Tandem Thin Film Solar Cell

Hafaifa,

Maache,

Bouabdelli

2024

J. Nano- Electron. Phys.

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“…However, these materials are consisting of some elements such as In, Ga, Se, and Cd are either expensive or toxic [1,2]. Cu 2 ZnSn(S,Se) 4 (CZTSSe) materials are low-cost, Earth-abundant, have a high absorption coefficient (>10 4 cm −1 ), and have an optimal optical band gap energy between 1 and 1.5 eV [3][4][5][6], making them a potential alternative to hazardous and expensive CIGSSe and CdTe thin-film solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…Devices made from CZTSSe have only obtained a maximum experimental power conversion efficiency of 12.6% [7], which is low when compared to the 21.0% and 21.7% efficiencies of CdTe and CIGS, respectively [6][7][8][9][10][11]. According to Siebentritt and Schorr [12], the efficiency of CZTSSe solar cells is constrained by the material's low open circuit voltage relative to the band gap.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical modeling of CZTSSe based thin-film solar cells

et al. 2023

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This research utilized an optical and electrical model to examine the impact of optical and recombination losses on the short circuit current density, Jsc, and conversion efficiency of thin-film solar cells based on n-CdS/p-CZTSSe with ITO frontal charge-collecting contacts. By analyzing the optical properties of the components, we were able to calculate the amount of light that was lost as a result of absorption in the ITO and CdS layers and as a result of reflection at all interfaces. The impact of using antireflection coating on the optical losses was studied. Recombination losses were calculated quantitatively by varying the CZTSSe thickness and depletion area width. It was found that the antireflection layer reduced the optical losses from 26 % to 20 %. It was found that the minimum value of the recombination losses is about 11% of what is observed at a width more than 1µm, and that the width of the depletion layer has a significant impact in the value of Jsc. Most of the incoming photons were absorbed by a layer of CZTSSe 3-4 µm thick. At these thicknesses, the recombination losses were considered low and recorded 16%. At reasonable values for the parameters employed, the efficiency of 14% is achievable.

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Improvement of Performance of Cu₂ZnSn(S, Se)₄ Solar Cells by Low‐Temperature Annealing of B‐Doped CdS

Ma,

Li,

Yao

et al. 2023

Solar RRL

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It is known that high carrier recombination at p‐n junction interface and low carrier separation ability (CSA) are two main problems resulting in low power conversion efficiency (PCE) of Cu2ZnSn(S,Se)4(CZTSSe) solar cell. To resolve these problems, one CZTSSe solar cell are prepared through substituting B‐doped CdS for CdS in solar cell with conventional structure of Ag/ITO/ZnO/CdS/CZTSSe/Mo/SLG and annealing B‐doped CdS/CZTSSe/Mo/SLG prior to deposition of ZnO, ITO and Ag electrode. By optimizing B doping content in the CdS and annealing temperature and time of the B‐doped CdS/CZTSSe, lattice mismatch between CdS and CZTSSe is decreased and width of depletion region is increased, leading to reduce in interfacial recombination, enhancement in carrier separation ability and intensity of incident light passing through the B‐doped CdS, and so increase in PCE from 7.89% of CZTSSe solar cell using CdS as buffer layer to 10.62%. A mechanism of the increment of the PCE induced by the B‐doping and annealing is suggested. This work proposes a method of increasing PCE of CZTSSe solar cell and advances a deeper understanding of the mechanisms behind various parameters in CZTSSe solar cells through theoretical analysis and calculations.This article is protected by copyright. All rights reserved.

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Analyses of p–n heterojunction in 9.4%-efficiency CZTSSe thin-film solar cells: Effect of Cu content

Cited by 5 publications

References 38 publications

Improving the Performance of CZTS/CZTSSe Tandem Thin Film Solar Cell

Improving the Performance of CZTS/CZTSSe Tandem Thin Film Solar Cell

Optical and electrical modeling of CZTSSe based thin-film solar cells

Improvement of Performance of Cu₂ZnSn(S, Se)₄ Solar Cells by Low‐Temperature Annealing of B‐Doped CdS

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Analyses of p–n heterojunction in 9.4%-efficiency CZTSSe thin-film solar cells: Effect of Cu content

Cited by 5 publications

References 38 publications

Improving the Performance of CZTS/CZTSSe Tandem Thin Film Solar Cell

Improving the Performance of CZTS/CZTSSe Tandem Thin Film Solar Cell

Optical and electrical modeling of CZTSSe based thin-film solar cells

Improvement of Performance of Cu2ZnSn(S, Se)4 Solar Cells by Low‐Temperature Annealing of B‐Doped CdS

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Improvement of Performance of Cu₂ZnSn(S, Se)₄ Solar Cells by Low‐Temperature Annealing of B‐Doped CdS