Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD

Xu, Peiqiang; Jiang, Yang; Chen, Yao; Ma, Zhuangzhuang; Wang, Xiaoli; Deng, Zhen; Li, Yudong; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

doi:10.1186/1556-276x-7-141

Cited by 10 publications

(4 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is our opinion that LED II with a 3-times-thick ETL generated a higher potential barrier height in heterostructure between prestrain layer and MQWs due to the piezoelectric polarization field. Thus, at lower injection current, the ETL of LED II can obviously block the electrons transport into the MQWs along the growth direction and the electrons can be accumulated in heterostructure interface (i.e., 2DEG-like structure [21][22][23] ). As the injection currents increase, these accumulated electrons will become easier to transport into the MQWs by tunneling mechanism.…”

Section: Resultsmentioning

confidence: 99%

GaN-Based Blue Light-Emitting Diodes with an Electron Transmission Layer

Jheng

Wang

Chiou

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this study, GaN-based blue light-emitting diodes (LEDs) with an n-GaN electron transmission layer (ETL) grown between prestrain layer and multiple quantum wells region were fabricated and investigated. As the thickness of ETL increased from 15 to 45 nm, the LEDs generated a 2DEG-like structure with better current spreading ability presented a lower forward voltage of 3.18 V, the light output power (LOP) was improved by 12.5%, and efficiency droop was less than the others. However, as the concentration of ETL increased from 2 × 1018 to 5 × 1018 cm−3, the LEDs performed an obvious decrease in LOP and increase in efficiency droop due to the serious electron overflow. On the other hand, the low temperature electroluminescence and hot/cold factors of LEDs with 45-nm-thick ETL also exhibited better properties, and its hot/cold factor was still quite high (0.87) even at an injection current of 700 mA.

show abstract

Section: Resultsmentioning

confidence: 99%

GaN-Based Blue Light-Emitting Diodes with an Electron Transmission Layer

Jheng

Wang

Chiou

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Second, polarization charge in the GaN/AlGaN heterostructure will surely influence ISB intensity since ISB absorption strongly relies on the net carrier density in the QW. Compositionally graded AlGaN films grown on unintentionally doped GaN templates can achieve high electron-sheet concentrations which are results of polarization-induced doping [27-29]. According to the HRXRD analysis, order satellite peaks at −1 were present in sample B.…”

Section: Resultsmentioning

confidence: 99%

Intersubband absorption properties of high Al content Al x Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition

Sun

Guo

et al. 2012

Nanoscale Res Lett

View full text Add to dashboard Cite

High Al content AlxGa1−xN/GaN multiple quantum well (MQW) films with different interlayers were grown by metal organic chemical vapor deposition. These MQWs were designed to achieve intersubband (ISB) absorption in the mid-infrared spectral range. We have considered two growth conditions, with AlGaN interlayer and GaN/AlN superlattice (SL) interlayer, both deposited on GaN-on-sapphire templates. Atomic force microscopy images show a relatively rough surface with atomic-step terraces and surface depression, mainly dominated by dislocations. High-resolution X-ray diffraction and transmission electron microscopy analyses indicate that good crystalline quality of the AlGaN/GaN MQW layer could be achieved when the AlGaN interlayer is inserted. The ISB absorption with a peak at 3.7 μm was demonstrated in MQW films with AlGaN interlayer. However, we have not observed the infrared absorption in MQW films with GaN/AlN SL interlayer. It is believed that the high dislocation density and weaker polarization that resulted from the rough interface are determinant factors of vanished ISB absorption for MQW films with the GaN/AlN SL interlayer.

show abstract

“…This finding reveals that n s and µ N are related to the polarisation effect and roughness scatterings caused by alloys of the (In)Al(Ga)N/GaN heterojunction [106,166]. Currently, the (In)Al(Ga)N/GaN heterojunction of GaNbased HEMTs includes AlGaN/GaN, InAlN/GaN, AlN/GaN, GaN/AlN SL barrier layers and multi-channel AlGaN/GaN layers [167][168][169][170][171][172]. In the traditional heterojunction, the AlGaN/GaN structure is most used to fabricate GaN-based HEMTs.…”

Section: (In)al(ga)n/gan Heterojunctionmentioning

confidence: 86%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

show abstract

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD

Cited by 10 publications

References 13 publications

GaN-Based Blue Light-Emitting Diodes with an Electron Transmission Layer

GaN-Based Blue Light-Emitting Diodes with an Electron Transmission Layer

Intersubband absorption properties of high Al content Al x Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Contact Info

Product

Resources

About