Analogy and dissimilarity of excitons in monolayer and bilayer of MoSe$_2$

Kipczak, Łucja; Slobodeniuk, A. O.; Woźniak, Tomasz; Bhatnagar, M; Zawadzka, Natalia; Olkowska‐Pucko, Katarzyna; Grzeszczyk, M.; Watanabe, Kenji; Taniguchi, Takashi; Babiński, A.; Molas, Maciej R.

doi:10.48550/arxiv.2211.16186

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Coulomb Potential In the Non-homogeneous System: General Case1

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2023

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“…This is a linear non-homogeneous differential equation of the second order, which solution can be presented as a sum of the general solution of the homogeneous equation and a particular solution of the non-homogeneous equation (see Ref. [32] and Supplementary Material)…”

Section: Coulomb Potential In the Non-homogeneous System: General Casementioning

confidence: 99%

Exciton spectrum in atomically thin monolayers: The role of hBN encapsulation

Slobodeniuk¹,

Molas²

2023

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The high-quality structures containing semiconducting transition metal dichalcogenides (S-TMDs) monolayer (MLs) required for optical and electrical studies are achieved by their encapsulation in hexagonal BN (hBN) flakes. To examine the effect of hBN thickness in these systems, we consider a model with an S-TMD ML placed between a semi-infinite in the out-of-plane direction substrate and complex top cover layers: a layer of finite thickness, adjacent to the ML, and a semi-infinite in the out-of-plane direction top part. We obtain the expression for the Coulomb potential for such a structure. Using this result we demonstrate that the energies of excitonic s states in the structure with WSe2 ML change significantly for the top hBN with thickness <30 layers. We observed that the excitonic binding energy (E b ) is reduced by almost 40% in the transition from the sample without the top hBN layer (E b =256 meV) to the one with an infinite thickness of the top hBN layer (E b =165 meV).

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Section: Coulomb Potential In the Non-homogeneous System: General Casementioning

confidence: 99%