Analog/Mixed-Signal Circuit Testing Technologies in IoT Era

Kobayashi, Haruo; Kuwana, Anna; Wei, Jianglin; Zhao, Yujie; Katayama, Shogo; Tran, Minh Tri; Hirai, Manato; Nakatani, Takayuki; Hatayama, Kazumi; Sato, Keno; Ishida, Takashi; Okamoto, Toshiyuki; Ichikawa, Tamotsu

doi:10.1109/icsict49897.2020.9278194

Cited by 14 publications

(3 citation statements)

References 31 publications

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“…5 AMS Circuit and System Testing Technologies AMS circuit and system testing technologies are important but their researchers are not so many in universities. Then we have been engaged in the research for them by collaborating with industry [109][110][111][112][113][114][115][116][117][118][119][120][121][122][123][124]. These are at the boundary between AMS circuit and LSI testing technologies.…”

Section: Mos Reference Current Sourcementioning

confidence: 99%

How the Author's Group Came Up with Ideas in Analog/Mixed-Signal Circuit and System Area

KOBAYASHI

2024

IEICE Trans. Fundamentals

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This article reviews the author's group research achievements in analog/mixed-signal circuit and system area with introduction of how they came up with the ideas. Analog/mixed-signal circuits and systems have to be designed as well-balanced in many aspects, and coming up ideas needs some experiences and discussions with researchers. It is also heavily dependent on researchers. Here, the author's group own experiences are presented as well as their research motivations.

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Section: Mos Reference Current Sourcementioning

confidence: 99%

How the Author's Group Came Up with Ideas in Analog/Mixed-Signal Circuit and System Area

KOBAYASHI

2024

IEICE Trans. Fundamentals

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“…With the advent of the IoT era, analog and analog-digital mixed signal (AMS) circuits are becoming increasingly important. Their high quality mass production tests must be performed at low cost [1,2,3]. Measurement instruments such as audio analyzers used in bench-top are not suitable for mass production testing due to their high cost and long measurement time.…”

Section: Introductionmentioning

confidence: 99%

Low distortion sine wave generator with simple harmonics cancellation circuit and filter for analog device testing

Katayama

Nakatani

Iimori

et al. 2023

IEICE Electron. Express

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This paper proposes a low-distortion sine wave generator using logic circuits and relatively simple analog filter for analog device testing. Our proposed circuit cancels 3rd-order harmonic distortion (HD3) and 5th-order harmonic distortion (HD5) by summing multiple rectangular waveforms of fundamental and higher frequencies. These rectangular waves are generated by appropriately dividing the rectangular wave from a digital automatic test equipment (ATE). The other higher order odd harmonics are removed by the following simple analog low-pass filter (LPF). We have implemented its prototype whose measurement results show the generation of a sine wave with harmonics of less than −95 dBc.

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“…Transistors are one of the key components in digital and analog circuits and systems, which play an essential role as switches or amplifiers. The integration of systems in one chip, known as system on a chip (SoC), has attracted wide attention due to the demand for reduction of the noises, propagation delays, etc., aroused from coupling the different detached blocks/elements of a system through wires [1][2][3][4][5]. Scaling down the transistors enables not only smaller chip area consumption but also has other benefits, such as decreasing the propagation delays in digital circuits and systems.…”

Section: Introductionmentioning

confidence: 99%

Performance and Geometry Study of Silicon Nanowire-based Field Effect Diodes (FED)

GolshanBafghi

2023

JCHAR

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Nanostructured solid-state devices demonstrate prominent electronic transport properties and thus represent powerful building blocks for a wide range of analog and digital integrated circuits and systems. In this study, the integration of the side-contacted field effect diode (S-FED) with the silicon nanowire concept is pursued to create a device that maintains a substantial aspect ratio while delivering suitable execution. The nanowire side-contacted FED (NW-SFED), referred to as this apparatus, exhibits the capability to achieve an exceptionally high ON/OFF current ratio of 4×10 8 , allowing for efficient switching between ON and OFF states. While the downscaling of the planar CMOS technology has faced severe constraints, this characteristic is featured as a figure of merit for the NW-SFED device. Accordingly, the device can also be used in a coordinated device-circuit co-design framework as a promising candidate to mitigate noise, delay, and energy. Herein, a quantitative evaluation of NW-SFED's performance is conducted utilizing a semiconductor drift-diffusion solver to explore how variations in channel length, device width, as well as the dimensions of the n + and p + doped regions in the source and drain, respectively, influence its operational characteristics. The impact of the channel length, spacer length and device width on NW-SFED fabrication turned out to be negligible. In contrast, the thickness of doped regions emerged as the critical parameter in the fabrication process.

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Analog/Mixed-Signal Circuit Testing Technologies in IoT Era

Cited by 14 publications

References 31 publications

How the Author's Group Came Up with Ideas in Analog/Mixed-Signal Circuit and System Area

How the Author's Group Came Up with Ideas in Analog/Mixed-Signal Circuit and System Area

Low distortion sine wave generator with simple harmonics cancellation circuit and filter for analog device testing

Performance and Geometry Study of Silicon Nanowire-based Field Effect Diodes (FED)

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