An XANES and XES investigation of the electronic structure of indium rich InxGa1−xN films

Demchenko, I.N.; Chernyshova, M.; Piskorska‐Hommel, E.; Minikayev, R.; Domagała, J. Z.; Yamaguchi, Tomohiro; Stolte, Wayne C.; Ławniczak-Jabłońska, K.

doi:10.1016/j.jallcom.2011.07.059

Cited by 5 publications

(7 citation statements)

References 24 publications

(24 reference statements)

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“…Initial N -edge studies [12][13][14][15][16] focused on InN and especially on an introductory comparison between experimental spectra and simulations. A XANES and x-ray emission study of In x Ga 1−x N epilayers for x < 0.55 has been recently reported; 17 although the overall spectral features are consistent with expectations, for samples with x = 0.23 and x = 0.53 the N -edge spectra exhibited limited linear dichroism, indicating heterogeneity, confirmed by the authors by x-ray diffraction techniques.…”

Section: Introductionsupporting

confidence: 77%

“…In some previous reports, [12][13][14]17 electron yield detection was employed, which is known to be very surface sensitive, so that the spectra might reflect the properties of the surface rather than the bulk; in another case, 15 fluorescence yield was adopted, but no details on correction for self-absorption effects, certainly present since N constitutes half the atomic composition of the sample, were provided.…”

Section: Introductionmentioning

confidence: 99%

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X-ray absorption spectra of InxGa1−xN alloys with insight from atom-specific simulations

et al. 2012

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We report N-K-edge x-ray absorption near-edge spectra of a set of In x Ga 1−x N alloy epilayers with 0.36 x 0.87, including linear dichroism effects. Careful experimental and data treatment procedures lead to consistent variations of spectral features with In concentration and sample orientation with respect to the direction of linear polarization of the x-ray beam. Insight into the origin of spectral features is provided by a combination of ab initio simulations of the equilibrium structure and atom-by-atom spectral simulations. The relation between the spectral lineshape and the variations in the composition of the first coordination shell and the corresponding local structural distortions is discussed.

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Section: Introductionsupporting

confidence: 77%

Section: Introductionmentioning

confidence: 99%

X-ray absorption spectra of InxGa1−xN alloys with insight from atom-specific simulations

et al. 2012

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“…The K-edge spectra contain the contribution from dumbbell-shaped p x,y and p z orbitals, and the high degree of linear dichroism reflects the asymmetric nature of these orbitals. 43,44 On the other hand, s orbitals are spherical and d orbitals have more symmetric distribution in space, rendering L 2,3 -edge spectra much less sensitive to the excitation polarization. 43,44 Furthermore, O K-edge XANES has higher spectral resolution owing to the significantly smaller core-hole width (0.16 eV) 45 compared to Ga L 2,3 -edge (0.76 eV), which can also contribute to the observed difference in polarized Xray absorption.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…43,44 On the other hand, s orbitals are spherical and d orbitals have more symmetric distribution in space, rendering L 2,3 -edge spectra much less sensitive to the excitation polarization. 43,44 Furthermore, O K-edge XANES has higher spectral resolution owing to the significantly smaller core-hole width (0.16 eV) 45 compared to Ga L 2,3 -edge (0.76 eV), which can also contribute to the observed difference in polarized Xray absorption. Oxygen K-edge XANES can also be used to assess the character of the Ga−O bond, which has been a 28 where e is the modulus of the electron charge.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Molecular Origin of Valence Band Anisotropy in Single β-Ga₂O₃ Nanowires Investigated by Polarized X-ray Absorption Imaging

2015

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The origin of anisotropy at the molecular and electronic structure levels in individual β-Ga 2 O 3 nanowires grown along the crystallographic b direction was studied using linearly polarized X-ray absorption imaging at both gallium L 3 and oxygen K edges. The O K-edge spectrum shows significant linear dichroism for the electric field vector of the X-rays oriented parallel and perpendicular to the nanowire long axis. The contributions from the three nonequivalent oxygen sites to the observed spectral anisotropy were elucidated by using FDMNES calculations in the framework of the multiple scattering theory. The role of relevant O and Ga orbitals in the linearly polarized O K-edge absorption was determined based on the point group symmetry arguments. The results of this work suggest mixed covalent and ionic character of the Ga−O bond in individual nanowires, with the dominant contribution of O 2p z orbitals to the absorption spectrum for the electric field vector oriented perpendicular, and O 2p x,y orbitals for the electric field vector oriented parallel to the nanowire long axis. Gallium 4p and d orbitals were found to contribute mostly to the antibonding states. These results improve the understanding of the origin of anisotropy in complex transparent metal oxide nanostructures, and could lead to the prediction of physical properties for different nanowire growth directions.

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“…XANES has been applied for the impurities in compound semiconductors, for instance Cl atoms in ZnSe [6] and Mg in GaN [7], as well as for the surface atoms of passivation [8]. Also this technique was utilized for the investigation of immiscible alloyed compound semiconductors such as GaAs x N 1-x [9] and In 1-x Ga x N [10] by paying attention to the local structure of N atoms.…”

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confidence: 99%

Local structure analysis of Zn_1‐xMg_x O thin films by soft X‐ray absorption spectroscopy

Ogata

Kozub

Koike

et al. 2013

Phys. Status Solidi C

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X‐ray absorption near edge structure (XANES) spectra in soft X‐ray region were utilized for the characterization of Zn1‐xMgx O films. Zn L ‐edge XANES spectra of Zn1‐xMgx O films changed as increasing Mg composition x, suggesting that local structure of the Zn atom in ZnO was influenced by the alloying with MgO. Mg K ‐edge XANES spectra of Zn1‐xMgx O films did not show any dependence on growth methods, but was different from that of MgO bulk, showing 4‐fold symmetry of Mg atoms. Similarly, O‐K edge XANES spectrum in Zn1‐xMgx O film showed 4‐fold symmetry of O atoms, and depicted a slight difference from that of ZnO, probably due to the contribution of 6‐fold Mg‐O bond formation. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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An XANES and XES investigation of the electronic structure of indium rich InxGa1−xN films

Cited by 5 publications

References 24 publications

X-ray absorption spectra of InxGa1−xN alloys with insight from atom-specific simulations

X-ray absorption spectra of InxGa1−xN alloys with insight from atom-specific simulations

Molecular Origin of Valence Band Anisotropy in Single β-Ga₂O₃ Nanowires Investigated by Polarized X-ray Absorption Imaging

Local structure analysis of Zn_1‐xMg_x O thin films by soft X‐ray absorption spectroscopy

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An XANES and XES investigation of the electronic structure of indium rich InxGa1−xN films

Cited by 5 publications

References 24 publications

X-ray absorption spectra of InxGa1−xN alloys with insight from atom-specific simulations

X-ray absorption spectra of InxGa1−xN alloys with insight from atom-specific simulations

Molecular Origin of Valence Band Anisotropy in Single β-Ga2O3 Nanowires Investigated by Polarized X-ray Absorption Imaging

Local structure analysis of Zn1‐xMgx O thin films by soft X‐ray absorption spectroscopy

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Product

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Molecular Origin of Valence Band Anisotropy in Single β-Ga₂O₃ Nanowires Investigated by Polarized X-ray Absorption Imaging

Local structure analysis of Zn_1‐xMg_x O thin films by soft X‐ray absorption spectroscopy