An X-Ray Photoelectron Spectroscopic and Chemical Reactivity Study of Routes to Functionalization of Etched InP Surfaces

Sturzenegger, M.; Lewis, Nathan S.

doi:10.1021/ja953691l

Cited by 16 publications

(19 citation statements)

References 14 publications

(18 reference statements)

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“…Assuming 1/3 of these are occupied with TFMBE ͑so that the TFMBE number density is similar to that in liquid TFMBB͒, we expect to find at most 2ϫ10 17 ligands on the surface. The agreement of this estimate with that from the above-given NMR measurements is fortuitous, as it is known that TFMBB does not react with the In rich ͑111͒A face of single crystal InP, 33,34 so it seems unlikely that we could have achieved close to 100% coverage.…”

Section: Resultssupporting

confidence: 76%

“…The binding of the methylene carbon is thought to be through residual -OH functionalities on the InP surface. 34 The powder was then washed four times with neat acetonitrile to remove any unbound TFMBB and then dried in air. 186 mg of the sample were used for NMR experiments, while the remaining ϳ100 mg was used for surface area measurements.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Nuclear spin polarization transfer across an organic-semiconductor interface

Goehring

Michal

2003

The Journal of Chemical Physics

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Motivated by Tycko's proposal to harness optically pumped nuclear spin polarization for the enhancement of nuclear magnetic resonance ͑NMR͒ signals from biological macromolecules, we investigate the transfer of thermal nuclear spin polarization between 1 H or 19 F in an organic overlayer and 31 P at the surface of micron-sized InP particles by Hartmann-Hahn cross polarization.Comparison with analytic and numerical models indicates that the total quantity of polarization transferred across the semiconductor-organic interface is limited by the relatively short room-temperature 1 H T 1 ͑11 ms͒ and the slow diffusion of nuclear spin polarization in the semiconductor. Models and spin-counting experiments indicate that we are able to transfer approximately 20% of the total nuclear spin polarization originating in the organic overlayer to the semiconductor, supporting the feasibility of transferred optically pumped NMR.

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Section: Resultssupporting

confidence: 76%

Section: Experimental Methodsmentioning

confidence: 99%

Nuclear spin polarization transfer across an organic-semiconductor interface

Goehring

Michal

2003

The Journal of Chemical Physics

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“…The surface passivation of semiconductors, such as gallium arsenide (GaAs) and indium phosphide (InP), is of great significance to the performance characteristics of optoelectronic and photovoltaic devices, and other devices. The control of surface electronic characteristics and reactivity is also important for fundamental studies of electron transfer at the solid−liquid interface and photocatalysis. − For InP, a few studies have reported on the chemical modification of the surface with thiol compounds, such as hydrogen sulfide H 2 S, , ammonium sulfide (NH 4 ) 2 S, − and alkanethiols C n H 2 n +1 SH. , An alternative approach to the modification of oxidized InP surfaces (via an OH functionality) was presented by Sturzenegger and Lewis the formation of a SAM of alkanethiols on InP has not yet been fully characterized. ,, …”

Section: Introductionmentioning

confidence: 99%

Characterization of the Surface to Thiol Bonding in Self-Assembled Monolayer Films of C₁₂H₂₅SH on InP(100) by Angle-Resolved X-ray Photoelectron Spectroscopy

Yamamoto

Butera

1999

Langmuir

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Angle-resolved X-ray photoelectron spectroscopy (ARXPS) was used to characterize the bonding of alkanethiols to n-InP surfaces and to measure the monolayer thickness. A careful comparison of the angle-dependent spectra for three different sample preparations (oxidized InP(100), HF-etched InP(100), and HF-etched InP(100) with a self-assembled monolayer of C12H25SH) shows that the sulfur binds to In atoms on the surface. Comparison of the angle-dependence of the intensity ratios for the In 3d5/2 core level of InP with the self-assembled monolayer (SAM) to that of sputtered InP provides a thickness for the SAM of 14 ( 4 Å, corresponding to alkane chains at a tilt angle of 44 ( 16°from the surface normal.

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“…This procedure afforded a useful route to molecular level control over the adhesion of conducting polymers onto the InP surface . In a recent X-ray photoelectron spectroscopy (XPS) and chemical reactivity study, the reactivity of the P-rich (111)B InP surface with alkyl halides, benzyl halides, and silyl halides was ascribed predominantly to surface hydroxyl moieties . In this manuscript, we provide a full description of these surface reactions.…”

Section: Introductionmentioning

confidence: 99%

Reactions of Etched, Single Crystal (111)B-Oriented InP To Produce Functionalized Surfaces with Low Electrical Defect Densities

et al. 1999

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Synthetic routes have been developed that allow attachment of a variety of functional groups to etched, singlecrystal InP surfaces. Benzyl halides, alkyl halides, silyl halides, and esters reacted readily with InP to yield covalently attached overlayers on the semiconductor surface. High-resolution X-ray photoelectron spectroscopy (XPS) revealed that the functionalization chemistry was consistent with the reactivity of surficial hydroxyl groups. Analysis of the XP spectra of the (111)B-oriented (P-rich) face in ultrahigh vacuum revealed signals ascribable to a monolayer of oxidized P atoms on the etched (111)B InP surface. The lack of reactivity of the (111)A-oriented (In-rich) face with these same functionalization reagents is therefore attributed to the difference in the nucleophilicity and acidity of the In and P oxides that are present on the (111)A and (111)B faces, respectively. The coverage of benzylic groups obtained through functionalization of (111)B-oriented InP with benzyl halides was estimated to be 4 × 10 14 cm 2 . This coverage implies that the functionalization can only proceed at alternate surface P atom sites in this system, which is expected from molecular packing considerations of these particular functional groups. Photoluminescence decay measurements were performed to investigate the electrical properties of the etched and modified InP surfaces, and these data indicated that the surface recombination velocity of the functionalized InP surface was ≈10 2 cm s -1 . This low surface recombination velocity implies that <1 electrically active defect is present for every 10 5 atoms on the modified InP surface, indicating that high electrical quality can be maintained while introducing a variety of chemical functionalities onto the (111)B surface of InP.

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An X-Ray Photoelectron Spectroscopic and Chemical Reactivity Study of Routes to Functionalization of Etched InP Surfaces

Cited by 16 publications

References 14 publications

Nuclear spin polarization transfer across an organic-semiconductor interface

Nuclear spin polarization transfer across an organic-semiconductor interface

Characterization of the Surface to Thiol Bonding in Self-Assembled Monolayer Films of C₁₂H₂₅SH on InP(100) by Angle-Resolved X-ray Photoelectron Spectroscopy

Reactions of Etched, Single Crystal (111)B-Oriented InP To Produce Functionalized Surfaces with Low Electrical Defect Densities

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An X-Ray Photoelectron Spectroscopic and Chemical Reactivity Study of Routes to Functionalization of Etched InP Surfaces

Cited by 16 publications

References 14 publications

Nuclear spin polarization transfer across an organic-semiconductor interface

Nuclear spin polarization transfer across an organic-semiconductor interface

Characterization of the Surface to Thiol Bonding in Self-Assembled Monolayer Films of C12H25SH on InP(100) by Angle-Resolved X-ray Photoelectron Spectroscopy

Reactions of Etched, Single Crystal (111)B-Oriented InP To Produce Functionalized Surfaces with Low Electrical Defect Densities

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Characterization of the Surface to Thiol Bonding in Self-Assembled Monolayer Films of C₁₂H₂₅SH on InP(100) by Angle-Resolved X-ray Photoelectron Spectroscopy