An X-ray exposure system for 100-nm-order SR lithography

Tsuyuzaki, H.; Fukuda, Makoto; Suzuki, Masanori; Kaneko, Takashi; Takeuchi, Nobuyuki; Kanai, M.

doi:10.1016/s0167-9317(98)00060-4

Cited by 9 publications

(8 citation statements)

References 2 publications

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“…The x-ray wavelength might vary over the exposure field because of the variation of the angle of reflection from the beamline mirrors and the variation of the air gap between the SiN window, which separated the helium chamber from the air, and an x-ray mask membrane. 16 The proximity gap might also vary over the field because of the nonflatness of the wafer. The nonuniformity of the hot-plate temperature was not the major cause of the CD variation because the measured nonuniformity was not consistent with the CD variation.…”

Section: Experimental Results Of CD Variationsmentioning

confidence: 99%

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Critical-dimension control for 100 nm patterns in x-ray lithography

Tanaka

Iwamoto

Fujii

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We investigated the printing characteristics of 100 nm line-and-space (L/S) and isolated-line patterns by using TDUR-N908 negative-tone resist, and analyzed the causes of their critical-dimension (CD) variation. For L/S patterns, a positive mask bias improves the dose profile, thereby enlarging the exposure latitude and reducing the linewidth variation of replicated resist patterns. The resist linewidths of L/S and isolated-line patterns at gaps of 10 and 15 μm were within ±10% of the mask linewidth over a wide range of pattern sizes down to 100 nm. The CD variation over the exposure field (24×24 mm) was as small as 8.6 nm (3σ) for L/S and 7.7 nm (3σ) for isolated-line patterns. After the removal of the effects of mask-CD variation and dose nonuniformity from the intrafield CD variation, a systematic CD variation remained for both types of patterns. The cause might be the nonuniformity over the exposure field of the absorber thickness, the x-ray wavelength, and/or the proximity gap.

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Section: Experimental Results Of CD Variationsmentioning

confidence: 99%

“…16 The dose uniformity obtained over the exposure field ͑24ϫ24 mm͒ was Ϯ3.2%. We used a 0.4-m-thick layer of the negative-tone resist TDUR-N908 ͑Tokyo Ohka͒.…”

Section: Experimental and Simulation Conditionsmentioning

confidence: 94%

Critical-dimension control for 100 nm patterns in x-ray lithography

Tanaka

Iwamoto

Fujii

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…In this simulation, the X-ray source was assumed to use the SR beam from the storage ring Super-ALIS at the SR facility at the NTT Atugi Research Center [1]. The spectrum of the incident beam on the mask is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

X-ray phase-shift mask for proximity x-ray lithography with synchrotron radiation

Ezaki

Murooka

1999

SPIE Proceedings

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In proximity X-ray lithography at the feasible gap size of'40 rim, using attenuated phase-shift masks is the most effective method of achieving high resolution pattern transfer at the feature size of sub-100 urn. In this study, we have investigated the absorption and the phase-shift controllability of Xray masks with various absorber materials by simulation and found that the phase-shift mask structure with Cu absorber is one ofthe best choices for proximity X-ray lithography using synchrotron radiation.

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“…Technol., Vol.12, No.4, 1999 and developed with 0.27N TMAH for 65 s. Exposure was carried out using the XS-1 xray stepper at a gap of 20 µm [7][8][9][10][11][12]. The configuration of the beam line was almost the same as the one designed for the SS-3 x-ray stepper [13]. The uniformity of the exposure dose was ± 4.4% in the 20 mm X 20 mm field.…”

Section: Methodsmentioning

confidence: 99%

Critical-dimension control for 130-nm patterns in x-ray lithography.

Tanaka

Iwamoto

Fujii

et al. 1999

J. Photopol. Sci. Technol.

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We evaluated critical-dimension (CD) control for three types of 130-nm patterns (lineand-space (L/S), isolated line, and hole) in proximity x-ray lithography (PXL). The intrawafer CD variation was found to be 7.9 nm (36) for L/S patterns, 9.9 nm (3a) for isolated lines, and 18.7 nm (3cr) for holes. We divided the CD variations into three components: intrafield CD variation, inter-field CD variation, and random CD errors. For line patterns, the largest component was intra-field CD variation, while the contributions of all three components were almost equal for hole patterns. The largest cause of the intra-field CD variation was the nonuniformity of the exposure dose. The CD variation due to mask-CD variation was less than half the mask-CD variation because of the effect of Fresnel diffraction. For holes, the major causes of inter-field CD variation and random CD errors might be the nonuniformity of the proximity gap and the edge roughness of the resist, respectively.

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An X-ray exposure system for 100-nm-order SR lithography

Cited by 9 publications

References 2 publications

Critical-dimension control for 100 nm patterns in x-ray lithography

Critical-dimension control for 100 nm patterns in x-ray lithography

X-ray phase-shift mask for proximity x-ray lithography with synchrotron radiation

Critical-dimension control for 130-nm patterns in x-ray lithography.

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