An X‐band high‐efficiency GaN load modulated balanced amplifier MMIC

Wang, Guangnian; Tao, Hongqi

doi:10.1002/mop.32309

Cited by 7 publications

(3 citation statements)

References 8 publications

(9 reference statements)

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“…Different from the LMBA circuits in References 7, 8, of which the transistors of the BPA are directly connected to the coupler, the prematching output networks of the main PA are proposed in this design. It is noted that the optimal load impedance of the transistor will tend to the edge of the Smith Chart with increasing frequency and output power.…”

Section: Design Of the Single‐input Lmbamentioning

confidence: 99%

8‐12 GHz single‐input GaN load modulated balanced amplifier monolithic microwave integrated circuit

Yin¹,

Tao²,

Wang³

et al. 2022

Int J RF Mic Comp-Aid Eng

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In this article, a broadband single-input GaN load modulated balanced amplifier (LMBA) with prematching networks is presented. The prematching networks of main PA are set up to reduce the difficulty of load modulation caused by high power control signal. The compact phase shifter and compression characteristic of the CS PA are used to monolithically integrate a single-input LMBA. The experimental results under continuous wave demonstrate a peak output power of 43.1-43.6 dBm, with drain efficiency (DE) of 49%-54% over the band of 8-12 GHz. Moreover, the DE is in the range of 30%-37% at the 6-dB power back-off region. By introducing a 16-quadrature amplitude modulation signal with 6-dB peak-to-average power ratio, the proposed single-input LMBA monolithic microwave integrated circuit achieves better than À28-dBc adjacent channel leakage ratio and higher than 32% average DE without digital predistortion at 9 and 11 GHz.

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Section: Design Of the Single‐input Lmbamentioning

confidence: 99%

8‐12 GHz single‐input GaN load modulated balanced amplifier monolithic microwave integrated circuit

Yin¹,

Tao²,

Wang³

et al. 2022

Int J RF Mic Comp-Aid Eng

Self Cite

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“…The need to maximize average efficiency, particularly for OBO ranging from 9 to 12 dB [1], calls for the extension of the existing solutions, such as the 6-dB two-way Doherty power amplifier (DPA) [2], or the development of new topologies such as the load-modulated balanced amplifier (LMBA) [3], distributed efficient power amplifier (DEPA) [4], and N -way DPA [5]. Even if a few examples extend toward high frequency [6], [7], [8], the prototypes presented in the literature mainly operate in the sub-6-GHz frequency bands and are based on single-stage demonstrators, achieving gains of the overall amplifier of the order of 10 dB.…”

Section: Introductionmentioning

confidence: 99%

A Two-Way GaN Doherty Amplifier for 5G FR2 With Extended Back-Off Range

Giofrè,

Piacibello,

Camarchia

et al. 2024

IEEE Microw. Wireless Tech. Lett.

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This article presents the design and experimental characterization of a two-way gallium nitride on silicon carbide (GaN-SiC) monolithic Doherty power amplifier (DPA) for deep back-off operation in the 5G FR2 band. The amplifier, including two driver stages ON-chip, achieves 35-dBm output power, 30% power-added efficiency, and 16-dB gain at saturation at 29 GHz. It favorably compares with the present state of the art, maintaining a power-added efficiency higher than 27%, 28%, and 22% at 6-, 9-, and 12-dB output power back-off, respectively.

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“…Although the balanced amplifier is capable of reaching one-octave bandwidth, it requires bulky 3 dB couplers and large power consumption [5,9,10,11]. The reactive/resistive topology can provide a positive roll-of insertion loss slope for gain compensation, but its modest bandwidth and relatively poor VSWR are the main drawbacks [12,13].…”

Section: Introductionmentioning

confidence: 99%

Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique

Peng

Chen

Zhang

et al. 2021

IEICE Electron. Express

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This paper presents a K-band two-stage power amplifier (PA) with a compact circuit size of 1.8×0.87 mm 2 . To guarantee broadband high-gain output performance, the optimal impedance domain and power cell are determined through load/source-pull simulation and Kpoint method, respectively. Reactive/resistive matching networks are carefully employed to reduce the equivalent gate capacitance, improve stability and compensate for the device's negative gain roll-off slope. Meanwhile, combining with feedback technique adopted in driver stage, the entire operation bandwidth can be further extended. Under 12 V pulse voltage supply, 37.4% of peak power-added efficiency (PAE) at 26 GHz and 24±0.5 dB of small-signal gain, 30.3-31.6 dBm of saturated output power (P sat ) across 22-27 GHz are obtained as shown in the experimental results.

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An X‐band high‐efficiency GaN load modulated balanced amplifier MMIC

Cited by 7 publications

References 8 publications

8‐12 GHz single‐input GaN load modulated balanced amplifier monolithic microwave integrated circuit

8‐12 GHz single‐input GaN load modulated balanced amplifier monolithic microwave integrated circuit

A Two-Way GaN Doherty Amplifier for 5G FR2 With Extended Back-Off Range

Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique

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